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Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition 期刊论文
materials, 2015, 卷号: 8, 期号: 9, 页码: 5586-5596
Shuxian Cai; Zhonghua Liu; Ni Zhong; Shengbei Liu; Xingfang Liu
收藏  |  浏览/下载：9/0  |  提交时间：2016/03/29
Vls growth of siox nanowires with a stepwise nonuniformity in diameter 期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: 5
作者:  Huang, Shengli;  Wu, Yan;  Zhu, Xianfang;  Li, Lunxiong;  Wang, Zhanguo
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12
Electrical transport properties of the si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: 5
作者:  Ying, J.;  Zhang, X. W.;  Yin, Z. G.;  Tan, H. R.;  Zhang, S. G.
收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12
Effect of gas pressure on the properties of silicon thin film 期刊论文
gongneng cailiao/journal of functional materials, 2011, 卷号: 42, 期号: 8, 页码: 1489-1491
Hao, Hui-Ying; Li, Wei-Min; Zeng, Xiang-Bo; Kong, Guang-Lin; Liao, Xian-Bo
收藏  |  浏览/下载：44/0  |  提交时间：2012/06/14
Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
journal of alloys and compounds, 2011, 卷号: 509, 期号: 3, 页码: 748-750
作者:  Yang H;  Jiang DS;  Le LC;  Zhang SM;  Wu LL
收藏  |  浏览/下载：46/3  |  提交时间：2011/07/05
VLS growth of SiOx nanowires with a stepwise nonuniformity in diameter 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.84328
Huang SL; Wu Y; Zhu XF; Li LX; Wang ZG; Wang LZ; Lu GQ
收藏  |  浏览/下载：29/0  |  提交时间：2011/07/05
Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者:  Yin ZG;  Zhang XW;  Tan HR;  Fan YM;  Zhang SG
收藏  |  浏览/下载：42/3  |  提交时间：2011/07/05
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH
收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05
Optimized growth of p-type algan electron blocking layer in the gan-based led 期刊论文
Acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: 6
作者:  Wang Bing;  Li Zhi-Cong;  Yao Ran;  Liang Meng;  Yan Fa-Wang
收藏  |  浏览/下载：39/0  |  提交时间：2019/05/12
Preparation and optical performance of freestanding gan thick films 期刊论文
Rare metal materials and engineering, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172
作者:  Hu Qiang;  Wei Tongbo;  Duan Ruifei;  Yang Jiankun;  Huo Ziqiang
收藏  |  浏览/下载：29/0  |  提交时间：2019/05/12

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