VLS growth of SiOx nanowires with a stepwise nonuniformity in diameter
Huang SL ; Wu Y ; Zhu XF ; Li LX ; Wang ZG ; Wang LZ ; Lu GQ
刊名journal of applied physics
2011
卷号109期号:8页码:article no.84328
关键词SILICON NANOWIRES SURFACE MIGRATION NANOSTRUCTURES CATALYST
ISSN号0021-8979
通讯作者zhu, xf, xiamen univ, china. australia joint lab funct nanomat, xiamen 361005, peoples r china. zhux@xmu.edu.cn
学科主题半导体材料
收录类别SCI
资助信息china-most [2008dfa51230]; national key basic science research program (973 project) [2007cb936603]; nsfc [60776007, 11074207]; china ministry of education [20100121110023]; srf for rocs, sem
语种英语
公开日期2011-07-05 ; 2011-07-15
附注with a precise control of temperature, gas flow, and pressure and with sequentially increased durations for reactions, the detailed processes of catalyzing, nucleation, and growth of the siox nanowires were successfully traced. especially a stepwise nonuniformity in diameter of nanowire during the growth was for the first time detected. with analysis of these detailed processes via nanocurvature and nano ripening effects, a further understanding of the vapor-liquid-solid mechanism was achieved and a novel mechanism for formation of the stepwise nonuniformity in diameter of nanowire was particularly proposed. all these will be the crucial basis for the further, accurately controlled growth of siox nanowires and the relevant applications. (c) 2011 american institute of physics. [doi:10.1063/1.3574398]
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/21243]  
专题半导体研究所_中科院半导体材料科学重点实验室
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Huang SL,Wu Y,Zhu XF,et al. VLS growth of SiOx nanowires with a stepwise nonuniformity in diameter[J]. journal of applied physics,2011,109(8):article no.84328.
APA Huang SL.,Wu Y.,Zhu XF.,Li LX.,Wang ZG.,...&Lu GQ.(2011).VLS growth of SiOx nanowires with a stepwise nonuniformity in diameter.journal of applied physics,109(8),article no.84328.
MLA Huang SL,et al."VLS growth of SiOx nanowires with a stepwise nonuniformity in diameter".journal of applied physics 109.8(2011):article no.84328.
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