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Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings 期刊论文
journal of nanoelectronics and optoelectronics, 2011, 卷号: 6, 期号: 1, 页码: 51-57
Ding F; Li B; Akopian N; Perinetti U; Chen YH; Peeters FM; Rastelli A; Zwiller V; Schmidt OG
收藏  |  浏览/下载：71/5  |  提交时间：2011/07/05
Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93708
作者:  Zhang XW
收藏  |  浏览/下载：47/3  |  提交时间：2011/07/05
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:  Xu B;  Jin P;  Ye XL
收藏  |  浏览/下载：63/1  |  提交时间：2011/07/05
Electrodepostied polyaniline films decorated with nano-islands: Characterization and application as anode buffer layers in solar cells 期刊论文
solar energy materials and solar cells, 2011, 卷号: 95, 期号: 2, 页码: 440-445
作者:  Liu K;  Tan FR
收藏  |  浏览/下载：87/5  |  提交时间：2011/07/05
Stable organic solar cells employing MoO(3)-doped copper phthalocyanine as buffer layer 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 22, 页码: 9382-9385
Cao GH; Li LS; Guan M; Zhao J; Li YY; Zeng YP
收藏  |  浏览/下载：7/0  |  提交时间：2012/01/06
Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 3, 页码: article no.37102
Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Li JM; Wang ZG
收藏  |  浏览/下载：40/4  |  提交时间：2011/07/05
The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films 期刊论文
materials letters, 2011, 卷号: 65, 期号: 4, 页码: 667-669
作者:  Liu C
收藏  |  浏览/下载：62/7  |  提交时间：2011/07/05
Formation trends of ordered self-assembled nanoislands on stepped substrates 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073512
Liang S (Liang S.); Zhu HL (Zhu H. L.); Kong DH (Kong D. H.); Wang W (Wang W.)
收藏  |  浏览/下载：12/0  |  提交时间：2010/11/14
Superconductivity in Iron Telluride Thin Films under Tensile Stress 期刊论文
physical review letters, 104 (1): jan 8 2010, 2010, 卷号: 104, 期号: 1, 页码: art. no. 017003
作者:  Wang XY
收藏  |  浏览/下载：72/14  |  提交时间：2010/04/13
43 K  FESE  COMPOUND  PRESSURE  
Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method 期刊论文
materials letters, 2010, 卷号: 64, 期号: 9, 页码: 1031-1033
Sun LL (Sun Lili); Liu C (Liu Chao); Li JM (Li Jianming); Wang JX (Wang Junxi); Yan FW (Yan Fawang); Zeng YP (Zeng Yiping); Li JM (Li Jinmin)
收藏  |  浏览/下载：225/60  |  提交时间：2010/05/07

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