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Low temperature, solution-processed ambipolar field-effect transistors based on polymer/self-assembled monolayer modified InOxhybrid structures for balanced hole and electron mobilities exceeding 1 cm2V−1s−1 (EI收录) 期刊论文
Organic Electronics: physics, materials, applications, 2017, 卷号: 43, 页码: 162-166
作者:  Sun, Sheng[1];  Li, Yuzhi[1];  Lan, Linfeng[1];  Xiao, Peng[1];  Chen, Zhenhui[1]
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