CORC

浏览/检索结果: 共20条,第1-10条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
High resolution electron bombareded complementary metal oxide semiconductor sensor for ultraviolet detection 期刊论文
ACTA PHYSICA SINICA, 2018, 卷号: 67, 期号: 1
作者:  Liu Hu-Lin;  Wang Xing;  Tian Jin-Shou;  Sai Xiao-Feng;  Wei Yong-Lin
收藏  |  浏览/下载:62/0  |  提交时间:2018/12/11
Effects of spacer layers on magnetic properties and exchange couplings of Nd-Fe-B/Nd-Ce-Fe-B multilayer films 期刊论文
IOP PUBLISHING LTD, 2017, 卷号: 26, 期号: 10, 页码: -
作者:  Sun, Ya-Chao;  Zhu, Ming-Gang;  Liu, Wei;  Han, Rui;  Zhang, Wen-Chen
收藏  |  浏览/下载:19/0  |  提交时间:2018/01/10
Si3.5Sb2Te3 Phase Change Material for Low-Power Phase Change Memory Application 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 10, 页码: 108101-108101
Ren, K; Rao, F; Song, ZT; Wu, LC; Zhou, XL; Xia, MJ; Liu, B; Feng, SL; Xi, W; Yao, DN; Chen, BM
收藏  |  浏览/下载:13/0  |  提交时间:2012/03/24
Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 10, 页码: 107302-107302
Chen, YF; Song, ZT; Chen, XG; Liu, B; Xu, C; Feng, GM; Wang, LY; Zhong, M; Feng, SL
收藏  |  浏览/下载:8/0  |  提交时间:2012/03/24
Reactive ion etching as cleaning method post chemical mechanical polishing for phase change memory device 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 2, 页码: 762-764
Zhong, M; Song, ZT; Liu, B; Feng, SL; Chen, B
收藏  |  浏览/下载:13/0  |  提交时间:2012/03/24
A 0.18-mu m 3.3V 16k bits 1R1T phase change random access memory (PCRAM) chip 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 10, 页码: 3815-3817
Ding, S; Song, ZT; Liu, B; Zhu, M; Chen, XG; Chen, YF; Shen, J; Fu, C; Feng, SL
收藏  |  浏览/下载:5/0  |  提交时间:2012/03/24
Switching characteristics of phase change memory cell integrated with metal-oxide semiconductor field effect transistor 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 5, 页码: 1848-1849
Xu, C; Liu, B; Chen, YF; Liang, S; Song, ZT; Feng, SL; Wan, XD; Yang, ZY; Xie, J; Chen, B
收藏  |  浏览/下载:18/0  |  提交时间:2012/03/24
Ge1Sb2Te4 based chalcogenide random access memory array fabricated by 0.18-mu m CMOS technology 期刊论文
CHINESE PHYSICS LETTERS, 2007, 卷号: 24, 期号: 3, 页码: 790-792
Zhang, T; Song, ZT; Feng, GM; Liu, B; Wu, LC; Feng, SL; Chen, B
收藏  |  浏览/下载:12/0  |  提交时间:2012/03/24
Si1Sb2Te3 phase change material for chalcogenide random access memory 期刊论文
CHINESE PHYSICS, 2007, 卷号: 16, 期号: 8, 页码: 2475-2478
Zhang, T; Song, ZT; Liu, B; Liu, WL; Feng, SL; Chen, B
收藏  |  浏览/下载:19/0  |  提交时间:2012/03/24
Damascene array structure of phase change memory fabricated with chemical mechanical polishing method 期刊论文
CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 8, 页码: 2296-2298
Liu, QB; Song, ZT; Zhang, KL; Wang, LY; Feng, SL; Chen, BM
收藏  |  浏览/下载:5/0  |  提交时间:2012/03/24


©版权所有 ©2017 CSpace - Powered by CSpace