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Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure
期刊论文
THIN SOLID FILMS, 2022, 卷号: 762
作者:
Cheng, Wangping
;
Li, Chenhui
;
Zhou, Chen
;
He, Yuandi
;
Wei, Renhuai
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2022/12/23
Resistive random access memory
Resistive switching
Self-rectifying behavior
Copper chromium oxide
Thin film
Solution deposition
Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2021, 卷号: 7, 期号: 5, 页码: -
作者:
Shih, Yu-Chuan
;
Lee, Ling
;
Liang, Kai-De
;
Manikandan, Arumugam
;
Liu, Wen-Wu
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2021/03/12
Copper
Copper oxides
Nanocrystalline materials
Nanowires
Oxide minerals
RRAM
Single crystals
Fabrication process
High current densities
Random access memory
Resistive switching
Resistive switching memory
Switching behaviors
Switching mechanism
Switching properties
Sub-nanosecond pulse programming and device design strategy for analog resistive switching in HfOx-based resistive random access memory
期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: 114
作者:
Hang, Cheng-Zhou
;
Wang, Chen
;
Gao, Bin
;
Chen, Huan
;
Xu, Ming-Hong
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/12/02
Electric breakdown
Energy utilization
Hafnium compounds
Integrated circuit design
Intelligent systems
Monte Carlo methods
RRAM, Kinetic monte carlo simulation
Microscopic distribution
Neuromorphic computing
Resistive random access memory
Resistive random access memory (rram)
Resistive switching
Sub-nanosecond pulse
Thermal conductance, Switching
High-Performance InGaZnO-Based ReRAMs
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 期号: 6, 页码: 2600-2605
作者:
Ma, Pengfei
;
Liang, Guangda
;
Wang, Yiming
;
Li, Yunpeng
;
Xin, Qian
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2019/12/11
Electrode
indium-gallium-zinc oxide (IGZO)
memory window
oxygen
plasma
resistive random access memories (ReRAMs)
retention time
Impact of chemical doping on resistive switching behavior in Zirconium-doped CHNHPbI based RRAM
期刊论文
Organic Electronics, 2019
作者:
Yuli He
;
Guokun Ma
;
Xiaowen Zhou
;
Hengmei Cai
;
Chunlei Liu
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/17
resistive random-access memory
CH3NH3PbI3 perovskite
Zirconium doping
space-charge limited conduction
Schottky emission
Fully Coupled Electrothermal Simulation of Large RRAM Arrays in the "Thermal-House''
期刊论文
IEEE ACCESS, 2019, 卷号: 7, 页码: 3897-3908
作者:
Wang, Da-Wei
;
Chen, Wenchao
;
Zhao, Wen-Sheng
;
Zhu, Guo-Dong
;
Kang, Kai
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2019/12/18
RANDOM-ACCESS MEMORY
RESISTIVE MEMORY
INTEGRATION
BEHAVIOR
DIAMOND
ZN4SB3
MODEL
Fully Coupled Electrothermal Simulation of Large RRAM Arrays in the "Thermal-House''
期刊论文
IEEE ACCESS, 2019, 卷号: 7, 页码: 3897-3908
作者:
Wang, Da-Wei
;
Chen, Wenchao
;
Zhao, Wen-Sheng
;
Zhu, Guo-Dong
;
Kang, Kai
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2019/12/18
RANDOM-ACCESS MEMORY
RESISTIVE MEMORY
INTEGRATION
BEHAVIOR
DIAMOND
ZN4SB3
MODEL
Fully Coupled Electrothermal Simulation of Large RRAM Arrays in the "Thermal-House''
期刊论文
IEEE ACCESS, 2019, 卷号: 7, 页码: 3897-3908
作者:
Wang, Da-Wei
;
Chen, Wenchao
;
Zhao, Wen-Sheng
;
Zhu, Guo-Dong
;
Kang, Kai
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2019/12/18
RANDOM-ACCESS MEMORY
RESISTIVE MEMORY
INTEGRATION
BEHAVIOR
DIAMOND
ZN4SB3
MODEL
Fully Coupled Electrothermal Simulation of Large RRAM Arrays in the "Thermal-House''
期刊论文
IEEE ACCESS, 2019, 卷号: 7, 页码: 3897-3908
作者:
Wang, Da-Wei
;
Chen, Wenchao
;
Zhao, Wen-Sheng
;
Zhu, Guo-Dong
;
Kang, Kai
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/12/18
RANDOM-ACCESS MEMORY
RESISTIVE MEMORY
INTEGRATION
BEHAVIOR
DIAMOND
ZN4SB3
MODEL
Fully Coupled Electrothermal Simulation of Large RRAM Arrays in the "Thermal-House''
期刊论文
IEEE ACCESS, 2019, 卷号: 7, 页码: 3897-3908
作者:
Wang, Da-Wei
;
Chen, Wenchao
;
Zhao, Wen-Sheng
;
Zhu, Guo-Dong
;
Kang, Kai
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2019/12/18
RANDOM-ACCESS MEMORY
RESISTIVE MEMORY
INTEGRATION
BEHAVIOR
DIAMOND
ZN4SB3
MODEL
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