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A SiC asymmetric cell trench MOSFET with a split gate and integrated p(+)-poly Si/SiC heterojunction freewheeling diode 期刊论文
CHINESE PHYSICS B, 2023, 卷号: 32, 期号: 5, 页码: 8
作者:  Jiang, Kaizhe;  Zhang, Xiaodong;  Tian, Chuan;  Zhang, Shengrong;  Zheng, Liqiang
收藏  |  浏览/下载：8/0  |  提交时间：2023/10/07
The effect of nonideal boundary condition on instability of THz plasma waves in quantum field-effect transistors 期刊论文
AIP Advances, 2022, 卷号: 12, 期号: 3
作者:  Zhang, Li-Ping;  Liu, Chen-Xiao;  Feng, Jiang-Xu;  Su, Jun-Yan
收藏  |  浏览/下载：17/0  |  提交时间：2022/04/21
Compact Model for Double-Gate Tunnel FETs With Gate-Drain Underlap 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 12, 页码: 5242-5248
作者:  Xu, Peng;  Lou, Haijun;  Zhang, Lining;  Yu, Zhonghua;  Lin, Xinnan
收藏  |  浏览/下载：5/0  |  提交时间：2019/11/15
Compact Model for Double-Gate Tunnel FETs with Gate-Drain Underlap 期刊论文
IEEE Transactions on Electron Devices, 2017, 卷号: 64, 期号: 12, 页码: 5242-5248
作者:  Xu, Peng;  Lou, Haijun;  Zhang, Lining
收藏  |  浏览/下载：0/0  |  提交时间：2020/11/14
Coherent Transport in a Linear Triple Quantum Dot Made from a Pure-Phase InAs Nanowire 期刊论文
NANO LETTERS, 2017
Wang, Ji-Yin; Huang, Shaoyun; Huang, Guang-Yao; Pan, Dong; Zhao, Jianhua; Xu, H. Q.
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03
Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit 期刊论文
SOLID-STATE ELECTRONICS, 2017
Al-Ameri, Talib; Georgiev, Vihar P.; Sadi, Toufik; Wang, Yijiao; Adamu-Lema, Fikru; Wang, Xingsheng; Amoroso, Salvatore M.; Towie, Ewan; Brown, Andrew; Asenov, Asen
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Fabrication and optimization of a high speed deep-trench super-junction MOSFET with improved EMI performance 其他
2016-01-01
Fei Wang; Min-Zhi Lin; Yuan-Lin Yuan; Lei Liu; Yuhua Cheng; Peng-Fei Wang
收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03
Gate Engineering in SOI LDMOS for Device Reliability 其他
2016-01-01
Aanand; Sheu, Gene; Imam, Syed Sarwar; Lu, Shao Wei; Aryadeep, Chirag; Yang, Shao Ming
收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03
A 0.75dB NF LNA in GaAs pHEMT utilizing gate-drain capacitance and gradual inductor 期刊论文
半导体学报, 2015
作者:  Zheng XN(郑新年);  Wang S(王硕)
收藏  |  浏览/下载：13/0  |  提交时间：2016/06/03
半导体器件及其制造方法 专利
专利号: US9012965, 申请日期: 2015-04-21, 公开日期: 2012-07-19
作者:  罗军;  赵超
收藏  |  浏览/下载：12/0  |  提交时间：2016/09/19

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