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Enhancement of 1.53 mu m photoluminescence from spin-coated Er-Si-O (Er2SiO5) crystalline films by nitrogen plasma treatment 期刊论文
journal of crystal growth, 2006, 卷号: 289, 期号: 1, 页码: 178-182
Wang XX; Zhang JG; Cheng BW; Yu JZ; Wang QM
收藏  |  浏览/下载:71/0  |  提交时间:2010/04/11
Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells 期刊论文
journal of non-crystalline solids, 2006, 卷号: 352, 期号: 9-20, 页码: 1900-1903
Hu ZH (Hu Zhihua); Liao XB (Liao Xianbo); Diao HW (Diao Hongwei); Cai Y (Cai Yi); Zhang SB (Zhang Shibin); Fortunato E (Fortunato Elvira); Martins R (Martins Rodrigo)
收藏  |  浏览/下载:59/0  |  提交时间:2010/04/11
Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) 期刊论文
journal of crystal growth, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40
作者:  Zhao DG
收藏  |  浏览/下载:299/12  |  提交时间:2010/08/12
Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si 期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 3-4, 页码: 255-260
Tan LW; Wang QY; Wang J; Yu YH; Liu ZL; Lin LY
收藏  |  浏览/下载:51/0  |  提交时间:2010/08/12
GdxSi grown with mass-analyzed low energy dual ion beam epitaxy technique 期刊论文
journal of crystal growth, 2002, 卷号: 242, 期号: 3-4, 页码: 389-394
Zhou JP; Chen NF; Zhang FQ; Song SL; Chai CL; Yang SY; Liu ZK; Lin LY
收藏  |  浏览/下载:54/0  |  提交时间:2010/08/12
Long-wavelength Si-based MQW photodetectors for application in optical fiber communication 会议论文
asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001
Wang QM; Li C; Yang QQ; Liu YL; Zhu YQ; Cheng BW; Yu JZ
收藏  |  浏览/下载:12/0  |  提交时间:2010/10/29
1.5 mu m luminescence characteristic of erbium in B, P doped a-SiO : H films 期刊论文
chinese physics, 2000, 卷号: 9, 期号: 10, 页码: 783-786
Liang JJ; Chen WD; Wang YQ; Chang Y; Wang ZG
收藏  |  浏览/下载:42/0  |  提交时间:2010/08/12
Photoluminescence of erbium-doped hydrogenated amorphous SiOx(0 < x < 2) 期刊论文
acta physica sinica, 2000, 卷号: 49, 期号: 7, 页码: 1386-1389
Liang JJ; Wang YQ; Chen WD; Wang ZG; Chang Y
收藏  |  浏览/下载:52/0  |  提交时间:2010/08/12
Hydrogen-dependent lattice dilation in GaN 期刊论文
semiconductor science and technology, 2000, 卷号: 15, 期号: 6, 页码: 619-621
Zhang JP; Wang XL; Sun DZ; Kong MY
收藏  |  浏览/下载:35/0  |  提交时间:2010/08/12
Relaxed GexSi1-x layer formation with reduced dislocation density grown by ultrahigh vacuum chemical vapor deposition 期刊论文
applied physics a-materials science & processing, 2000, 卷号: 70, 期号: 4, 页码: 449-451
Luo GL; Chen PY; Lin XF; Tsien P; Fan TW
收藏  |  浏览/下载:51/0  |  提交时间:2010/08/12


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