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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Multiplicity factor and diffraction geometry factor for single crystal X-ray diffraction analysis and measurement of phase content in cubic GaN/GaAs(001) epilayers 期刊论文 science in china series a-mathematics physics astronomy, 2001, 卷号: 44, 期号: 4, 页码: 497-503 Qu B; Zheng XH; Wang YT; Feng ZH; Han JY; Liu S; Lin SM; Yang H; Liang JW 收藏  |  浏览/下载：106/6  |  提交时间：2010/08/12 four-circle diffraction  GaN  phase content  MOLECULAR-BEAM EPITAXY  GAN FILMS  GROWTH  STABILITY  RATIO   Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser 期刊论文 japanese journal of applied physics part 1-regular papers short notes & review papers, 1998, 卷号: 37, 期号: 6b, 页码: 3673-3675 Pan Z; Zhang Y; Du Y; Wu RH 收藏  |  浏览/下载：31/0  |  提交时间：2010/08/12 VCSEL  selective oxidation  stability  MICROSTRUCTURE  WET OXIDATION   Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser 会议论文 6th microoptics conference / 14th topical meeting on gradient-index optical systems (moc/grin 97), tokyo, japan, oct 07-09, 1997 Pan Z; Zhang Y; Du Y; Wu RH 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 VCSEL  selective oxidation  stability  WET OXIDATION  MICROSTRUCTURE