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科研机构
半导体研究所 [20]
内容类型
期刊论文 [18]
会议论文 [2]
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2009 [5]
2008 [3]
2004 [1]
2003 [1]
2002 [6]
2001 [2]
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半导体物理 [20]
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Structure, magnetization, and low-temperature spin dynamic behavior of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 5, 页码: art. no. 053912
Wang WZ
;
Deng JJ
;
Lu J
;
Sun BQ
;
Wu XG
;
Zhao JH
收藏
  |  
浏览/下载:213/74
  |  
提交时间:2010/03/08
annealing
Curie temperature
ferromagnetic materials
gallium arsenide
III-V semiconductors
magnetic susceptibility
magnetisation
manganese compounds
nanofabrication
nanostructured materials
RKKY interaction
semiconductor thin films
semimagnetic semiconductors
spin dynamics
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
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  |  
浏览/下载:70/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Optical properties of aluminum-, gallium-, and indium-doped Bi4Ti3O12 thin films
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 11, 页码: art. no. 113108
作者:
Jia CH
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  |  
浏览/下载:105/4
  |  
提交时间:2010/03/08
PULSED-LASER DEPOSITION
FERROELECTRIC PROPERTIES
ELECTRICAL-PROPERTIES
STRUCTURAL-PROPERTIES
SUBSTRATE
Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911
作者:
Chen L
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  |  
浏览/下载:74/0
  |  
提交时间:2010/03/08
annealing
gallium arsenide
iron
magnetic anisotropy
magnetic epitaxial layers
magnetisation
molecular beam epitaxial growth
transmission electron microscopy
X-ray diffraction
Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 18, 页码: art.no.182505
作者:
Chen L
;
Qian X
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  |  
浏览/下载:84/39
  |  
提交时间:2010/03/08
annealing
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles
期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ
;
Zhu LF
;
Zhao YH
;
Liu BG
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  |  
浏览/下载:217/56
  |  
提交时间:2010/03/08
ab initio calculations
aluminium compounds
annealing
band structure
chromium
Curie temperature
density functional theory
exchange interactions (electron)
ferromagnetic materials
III-V semiconductors
semimagnetic semiconductors
total energy
vacancies (crystal)
Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112
Ma, P
;
Gai, YQ
;
Wang, JX
;
Yang, FH
;
Zeng, YP
;
Li, JM
;
Li, JB
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  |  
浏览/下载:24/0
  |  
提交时间:2010/03/08
P-TYPE GAN
MOLECULAR-BEAM EPITAXY
AUGMENTED-WAVE METHOD
VAPOR-PHASE EPITAXY
ELECTRICAL-PROPERTIES
OXYGEN
ACTIVATION
SILICON
Synthesis and characterization of ZnO nanoflowers grown on AIN films by solution deposition
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 2, 页码: 640-643
Gao, HY
;
Yan, FW
;
Zhang, Y
;
Li, JM
;
Zeng, YP
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  |  
浏览/下载:51/4
  |  
提交时间:2010/03/08
CHEMICAL-VAPOR-DEPOSITION
NANORODS
MECHANISM
NANOWIRES
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
会议论文
asia-pacific optical and wireless communications conference (apoc 2003), wuhan, peoples r china, nov 04-06, 2003
Ying-Qiang X
;
Zhang W
;
Niu ZC
;
Wu RG
;
Wang QM
收藏
  |  
浏览/下载:16/1
  |  
提交时间:2010/10/29
GaNAs
SiO2 encapsulation
rapid-thermal-annealing
nitrogen reorganization
MOLECULAR-BEAM EPITAXY
OPTICAL-PROPERTIES
MU-M
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient
期刊论文
microelectronic engineering, 2003, 卷号: 66, 期号: 1-4, 页码: 333-339
Wang QY
;
Wang JH
;
Deng HF
;
Lin LY
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  |  
浏览/下载:45/0
  |  
提交时间:2010/08/12
neutron irradiation
annealing
defects in silicon
SPECTRA
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