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科研机构
半导体研究所 [13]
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期刊论文 [10]
会议论文 [3]
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2010 [1]
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半导体材料 [13]
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Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy
期刊论文
applied surface science, 2010, 卷号: 256, 期号: 23, 页码: 7327-7330
Zheng GL (Zheng Gaolin)
;
Wang J (Wang Jun)
;
Liu XL (Liu Xianglin)
;
Yang AL (Yang Anli)
;
Song HP (Song Huaping)
;
Guo Y (Guo Yan)
;
Wei HY (Wei Hongyuan)
;
Jiao CM (Jiao Chunmei)
;
Yang SY (Yang Shaoyan)
;
Zhu QS (Zhu Qinsheng)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:167/22
  |  
提交时间:2010/08/17
MgO
Rutile
Band offset
X-ray photoelectron spectroscopy
Gate dielectric
Dye-sensitized solar cells
Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107
Zhang BL
;
Sun GS
;
Guo Y
;
Zhang PF
;
Zhang RQ
;
Fan HB
;
Liu XL
;
Yang SY
;
Zhu QS
;
Wang ZG
收藏
  |  
浏览/下载:231/42
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
indium compounds
interface states
semiconductor heterojunctions
silicon compounds
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs
期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 23, 页码: 5846-5850
Jiao YH (Jiao Y. H.)
;
Wu J (Wu J.)
;
Xu B (Xu B.)
;
Jin P (Jin P.)
;
Hu LJ (Hu L. J.)
;
Liang LY (Liang L. Y.)
;
Ren YY (Ren Y. Y.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:105/0
  |  
提交时间:2010/04/11
CHEMICAL-VAPOR-DEPOSITION
FIELD-EFFECT TRANSISTORS
QUANTUM-DOTS
SELF-ORGANIZATION
ISLANDS
NANOSTRUCTURES
SUPERLATTICES
GROWTH
SURFACE
GAAS(100)
Quantum-dot growth simulation on periodic stress of substrate
期刊论文
journal of chemical physics, 2005, 卷号: 123, 期号: 9, 页码: art.no.094708
作者:
Xu B
收藏
  |  
浏览/下载:149/46
  |  
提交时间:2010/03/17
KINETIC MONTE-CARLO
Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
作者:
Jin P
;
Xu B
收藏
  |  
浏览/下载:127/16
  |  
提交时间:2010/03/29
QUANTUM DOTS
Self-assembled quantum dots, wires and quantum-dot lasers
期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 1132-1139
作者:
Xu B
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  |  
浏览/下载:143/9
  |  
提交时间:2010/08/12
low dimensional structures
strain
molecular beam epitaxy
quantum dots
semiconducting III-V materials
laser diodes
WELL LASERS
Self-assembled quantum dots, wires and quantum-dot lasers
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
作者:
Xu B
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  |  
浏览/下载:13/0
  |  
提交时间:2010/11/15
low dimensional structures
strain
molecular beam epitaxy
quantum dots
semiconducting III-V materials
laser diodes
WELL LASERS
Self-assembled InAs quantum wires on InP(001)
期刊论文
journal of crystal growth, 2000, 卷号: 219, 期号: 1-2, 页码: 180-183
作者:
Xu B
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2010/08/12
InAs quantum wires
InP(001)
SHORT-PERIOD SUPERLATTICES
GAAS
EPITAXY
ISLANDS
Self-assembled InAs quantum wires on InP(001)
会议论文
11th international semiconducting and insulating materials conference (simc-xi), canberra, australia, jul 03-07, 2000
作者:
Xu B
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
SHORT-PERIOD SUPERLATTICES
VAPOR-PHASE EPITAXY
GAAS
ISLANDS
STATE
Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy
期刊论文
journal of crystal growth, 1999, 卷号: 205, 期号: 4, 页码: 607-612
作者:
Ye XL
;
Xu B
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2010/08/12
quantum dots
InGaAs/InGaAlAs
adjusting layer
molecular beam epitaxy
high index
GAAS
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