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CORC

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The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates 期刊论文
physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 7, 页码: 1501-1503
Sun LL; Yan FW; Wang JX; Zhang HX; Zeng YP; Wang GH; Li JM
收藏  |  浏览/下载：55/1  |  提交时间：2010/03/08
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301
作者:  Jin P;  Wei HY;  Song HP
收藏  |  浏览/下载：310/47  |  提交时间：2010/03/08
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM
收藏  |  浏览/下载：46/0  |  提交时间：2010/03/09
Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer 期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1705-1708
Ma ZY (Ma Zhi-Yong); Wang XL (Wang Xiao-Liang); Hu GX (Hu Guo-Xin); Ran JX (Ran Jun-Xue); Xiao HL (Xiao Hong-Ling); Luo WJ (Luo Wei-Jun); Tang J (Tang Jian); Li JP (Li Jian-Ping); Li JM (Li Jin-Min)
收藏  |  浏览/下载：70/0  |  提交时间：2010/03/29
Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition 期刊论文
thin solid films, 2006, 卷号: 497, 期号: 1-2, 页码: 157-162
Ai B; Shen H; Liang ZC; Chen Z; Kong GL; Liao XB
收藏  |  浏览/下载：48/0  |  提交时间：2010/04/11
High-precision determination of lattice constants and structural characterization of InN thin films 期刊论文
journal of vacuum science & technology a, 2006, 卷号: 24, 期号: 2, 页码: 275-279
Wu MF; Zhou SQ; Vantomme A; Huang Y; Wang H; Yang H
收藏  |  浏览/下载：108/0  |  提交时间：2010/04/11
Void formation and failure in InGaN/AlGaN double heterostructures 期刊论文
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 404-412
作者:  Han PD
收藏  |  浏览/下载：206/2  |  提交时间：2010/08/12
Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate 期刊论文
journal of crystal growth, 2003, 卷号: 249, 期号: 1-2, 页码: 72-77
作者:  Li DB
收藏  |  浏览/下载：56/0  |  提交时间：2010/08/12
Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer 期刊论文
journal of crystal growth, 2002, 卷号: 236, 期号: 1-3, 页码: 77-84
作者:  Han PD
收藏  |  浏览/下载：74/5  |  提交时间：2010/08/12
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
作者:  Xu B
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15

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