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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Ground state energy of He isoelectronic sequence treated variationally via Hylleraas-like wavefunction 期刊论文 chinese physics b, 2009, 卷号: 18, 期号: 6, 页码: 2238-2243 Guo Jian-Chuan; Zuo Yu-Hua; Zhang Yun; Ding Wu-Chang; Cheng Bu-Wen; Yu Jin-Zhong; Wang Qi-Ming 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/23 Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector 期刊论文 semiconductor science and technology, 2008, 卷号: 23, 期号: 10, 页码: art. no. 105015 Zhang, S; Zhao, DG; Jiang, DS; Liu, WB; Duan, LH; Wang, YT; Zhu, JJ; Liu, ZS; Zhang, SM; Yang, H 收藏  |  浏览/下载：63/0  |  提交时间：2010/03/08 METAL ULTRAVIOLET PHOTODETECTORS  UV DETECTORS   High-temperature AlN interlayer for crack-free AlGaN growth on GaN 期刊论文 journal of applied physics, 2008, 卷号: 104, 期号: 4, 页码: art. no. 043516 Sun, Q; Wang, JT; Wang, H; Jin, RQ; Jiang, DS; Zhu, JJ; Zhao, DG; Yang, H; Zhou, SQ; Wu, MF; Smeets, D; Vantomme, A 收藏  |  浏览/下载：73/0  |  提交时间：2010/03/08 STRESS  SI(111)  REDUCTION  THICKNESS   Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Yan, JC; Wang, JX; Liu, NX; Liu, Z; Li, JM 收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09 AlGaN  GaN template  A1N interlayer  MOCVD  crack  interference fringes   Calculation of energy levels in InGaAs/GaAs quantum dot array 期刊论文 acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5429-5435 Xiao-Jie, Y (Yang Xiao-Jie); Qing, W (Wang Qing); Wen-Quan, M (Ma Wen-Quan); Liang-Hui, C (Chen Liang-Hui) 收藏  |  浏览/下载：40/0  |  提交时间：2010/03/29 InGaAs   Strain evolution in GaN layers grown on high-temperature AlN interlayers 期刊论文 applied physics letters, 2006, 卷号: 89, 期号: 15, 页码: art.no.152105 Wang JF (Wang J. F.); Yao DZ (Yao D. Z.); Chen J (Chen J.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang H.); Liang JW (Liang J. W.) 收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION  STRESS EVOLUTION  DEFECT STRUCTURE  EPITAXIAL GAN  THIN-FILMS  ALGAN  DISLOCATIONS  RELAXATION  REDUCTION   Computation of resonant frequencies and quality factors of cavities by FDTD technique and Pade approximation 期刊论文 ieee microwave and wireless components letters, 2001, 卷号: 11, 期号: 5, 页码: 223-225 Guo WH; Li WJ; Huang YZ 收藏  |  浏览/下载：124/5  |  提交时间：2010/08/12 cavity  fast Fourier transform  finite-difference time-domain technique  Pade approximation  quality factor  resonant frequency