QQ客服 官方微博 反馈留言

浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection measurements 期刊论文 journal of applied physics, 2008, 卷号: 103, 期号: 8, 页码: art. no. 083121 Liu, HY; Meng, ZM; Dai, QF; Wu, LJ; Guo, Q; Hu, W; Liu, SH; Lan, S; Yang, T 收藏  |  浏览/下载：52/3  |  提交时间：2010/03/08 ENERGY RELAXATION  ELECTRON RELAXATION  CAPTURE  PHONON  INAS  GAAS  TEMPERATURE  DEPENDENCE  DENSITY  TIME   Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Zhao, YW; Zhang, F; Zhang, R; Dong, ZY; Wei, XC; Zeng, YP; Li, JM 收藏  |  浏览/下载：43/0  |  提交时间：2010/03/09 zinc oxide  defect  vacancy   Measurement of threading dislocation densities in GaN by wet chemical etching 期刊论文 semiconductor science and technology, 2006, 卷号: 21, 期号: 9, 页码: 1229-1235 作者:  Yang H;  Zhu JJ;  Yang H;  Wang H;  Wang H 收藏  |  浏览/下载：40/0  |  提交时间：2010/04/11 X-RAY-DIFFRACTION   Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate 期刊论文 journal of materials science & technology, 2006, 卷号: 22, 期号: 5, 页码: 651-654 Zhao L (Zhao Lei); Zuo YH (Zuo Yuhua); Cheng BW (Cheng Buwen); Yu JZ (Yu Jinzhong); Wang QM (Wang Qiming) 收藏  |  浏览/下载：37/0  |  提交时间：2010/04/11 Si1_xGex  Ge content  composition determination  double crystals X-ray diffraction (DCXRD)  micro-Raman measurement  BAND-GAP  HETEROSTRUCTURES  SUPERLATTICES  ALLOYS  RELAXATION  SCATTERING  THICKNESS  STRAIN   Study of self-assembled InAs quantum dots grown on low temperature GaAs epi-layer 期刊论文 journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 177-180 Wang XD; Wang H; Wang HL; Niu ZC; Feng SL 收藏  |  浏览/下载：54/0  |  提交时间：2010/08/12 InAs quantum dots  low temperature GaAs  As precipitates  MOLECULAR-BEAM EPITAXY  DEPENDENCE