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Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 14, 页码: art. no. 145410
作者:  Zhang SM;  Yang H;  Yang H;  Wang YT;  Zhu JJ
收藏  |  浏览/下载:72/0  |  提交时间:2010/03/08
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H
收藏  |  浏览/下载:88/41  |  提交时间:2010/03/08


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