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浏览/检索结果: 共16条，第1-10条 帮助 限定条件 发表日期：2008    学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Monolithic integration of sampled grating DBR with electroabsorption modulator by combining selective-area-growth MOCVD and quantum-well intermixing 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 10, 页码: 3670-3672 Liu, HB; Zhao, LJ; Pan, JQ; Zhu, HL; Zhou, F; Wang, BJ; Wang, W 收藏  |  浏览/下载：19/0  |  提交时间：2010/03/08 TUNING RANGE  LASERS  TRANSMITTER  PERFORMANCE  MOVPE   Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes 期刊论文 chinese physics b, 2008, 卷号: 17, 期号: 4, 页码: 1472-1474 Zhang, Y; Han, CL; Gao, JF; Zhu, ZP; Wang, BQ; Zeng, YP 收藏  |  浏览/下载：55/6  |  提交时间：2010/03/08 resonant tunnelling diode  molecular beam epitaxy   Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112 Ma, P; Gai, YQ; Wang, JX; Yang, FH; Zeng, YP; Li, JM; Li, JB 收藏  |  浏览/下载：24/0  |  提交时间：2010/03/08 P-TYPE GAN  MOLECULAR-BEAM EPITAXY  AUGMENTED-WAVE METHOD  VAPOR-PHASE EPITAXY  ELECTRICAL-PROPERTIES  OXYGEN  ACTIVATION  SILICON   Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes on quantum well widths 期刊论文 chinese physics b, 2008, 卷号: 17, 期号: 12, 页码: 4645-4647 作者:  Zhang Y;  Zhang Y 收藏  |  浏览/下载：268/32  |  提交时间：2010/03/08 resonant tunnelling diode  molecular beam epitaxy   Systematic investigation on the influence of the As-4 flux on the magnetic property of (In,Cr)As quantum dots 期刊论文 epl, 2008, 卷号: 84, 期号: 5, 页码: art. no. 58007 作者:  Tan PH 收藏  |  浏览/下载：160/34  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  FERROMAGNETISM  GROWTH  ARRAYS   Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy 期刊论文 chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123 Gao, HL; Zeng, YP; Wang, BQ; Zhu, ZP; Wang, ZG 收藏  |  浏览/下载：54/6  |  提交时间：2010/03/08 molecular beam epitaxy  semiconducting III-V materials  high electron mobility transistors   Structural, electrical, and optical properties of InAsxSb1-x epitaxial films grown by liquid-phase epitaxy 期刊论文 journal of applied physics, 2008, 卷号: 104, 期号: 7, 页码: art. no. 073712 作者:  Wang Y;  Zhang XW;  Yin ZG 收藏  |  浏览/下载：44/0  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY   Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well 期刊论文 applied physics letters, 2008, 卷号: 92, 期号: 5, 页码: art. no. 051908 Lu SL; Bian LF; Uesugi M; Nosho H; Tackeuchi A; Niu ZC 收藏  |  浏览/下载：49/2  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY   Doped polycrystalline 3C-SiC films deposited by LPCVD for radio-frequency MEMS applications 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 6, 页码: 2269-2272 Zhao, YM; Sun, GS; Ning, J; Liu, XF; Zhao, WS; Wang, L; Li, JM 收藏  |  浏览/下载：40/0  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION   Synthesis and characterization of ZnO nanoflowers grown on AIN films by solution deposition 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 2, 页码: 640-643 Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP 收藏  |  浏览/下载：51/4  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION  NANORODS  MECHANISM  NANOWIRES