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浏览/检索结果: 共21条，第1-10条 帮助 限定条件 发表日期：2007    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Carrier channels of multimodal-sized quantum dots: a surface-mediated adatom migration picture 期刊论文 Physical review b, 2007, 卷号: 76, 期号: 12, 页码: 7 作者:  Ding, Fei;  Chen, Y. H.;  Tang, C. G.;  Xu, Bo;  Wang, Z. G. 收藏  |  浏览/下载：9/0  |  提交时间：2019/05/12 Anomalous photoluminescence of inas quantum dots implanted by mn ions 期刊论文 Physica e-low-dimensional systems & nanostructures, 2007, 卷号: 36, 期号: 2, 页码: 221-225 作者:  Hu, L. J.;  Chen, Y. H.;  Ye, X. L.;  Huang, X. Q.;  Liang, L. Y. 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Photoluminescence  Mn  Inas quantum dot   Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN? 期刊论文 journal of applied physics, 2007, 卷号: 102, 期号: 11, 页码: art. no. 113521 Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Liang, JW; Yang, H 收藏  |  浏览/下载：51/5  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  X-RAY-DIFFRACTION  MG-DOPED GAN  UNDOPED GAN  PHOTOLUMINESCENCE BANDS  THREADING DISLOCATIONS  POSITRON-ANNIHILATION  GROWTH STOICHIOMETRY  GALLIUM NITRIDE   Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111) 期刊论文 nanotechnology, 2007, 卷号: 18, 期号: 1, 页码: art.no.015402 Wu JJ (Wu Jiejun); Zhang GY (Zhang Guoyi); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping) 收藏  |  浏览/下载：122/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Carrier channels of multimodal-sized quantum dots: A surface-mediated adatom migration picture 期刊论文 physical review b, 2007, 卷号: 76, 期号: 12, 页码: art.no.125404 Ding F (Ding Fei); Chen YH; Tang CG; Xu B (Xu Bo); Wang ZG 收藏  |  浏览/下载：35/0  |  提交时间：2010/03/29 TEMPERATURE-DEPENDENCE   High performance 1689-nm quantum well diode lasers 期刊论文 chinese optics letters, 2007, 卷号: 5, 期号: 10, 页码: 585-587 Duan, YP; Lin, T; Wang, CL; Chong, F; Ma, XY 收藏  |  浏览/下载：60/6  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  MU-M  ROOM-TEMPERATURE  HIGH-POWER  OPERATION  CW   Synthesis and characterization of ZnO nanorods and nanoflowers grown on GaN-based LED epiwafer using a solution deposition method 期刊论文 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 12, 页码: 3654-3659 Gao HY (Gao Haiyong); Yan FW (Yan Fawang); Li JM (Li Jinmin); Zeng YP (Zeng Yiping); Wang JX (Wang Junxi) 收藏  |  浏览/下载：79/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE 期刊论文 physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 10, 页码: 3405-3409 Wang XY (Wang Xiaoyan); Wang XL (Wang Xiaoliang); Wang BZ (Wang Baozhu); Xiao HL (Xiao Hongling); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Li AN (Li Antnin) 收藏  |  浏览/下载：46/0  |  提交时间：2010/03/29 MOLECULAR-BEAM EPITAXY   Surface plasmon enhanced ultraviolet emission from ZnO films deposited on Ag/Si(001) by magnetron sputtering 期刊论文 applied physics letters, 2007, 卷号: 91, 期号: 23, 页码: art. no. 231907 作者:  Zhang XW;  You JB;  Fan YM 收藏  |  浏览/下载：54/1  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY   Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD 期刊论文 physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 1, 页码: 294-298 Jahn U (Jahn Uwe); Jiang DS (Jiang De-Sheng); Ploog KH (Ploog Klaus H.); Wang XL (Wang Xiaolan); Zhao DG (Zha0 Degang); Yang H (Yang, Hui) 收藏  |  浏览/下载：30/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION