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Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN? 期刊论文
journal of applied physics, 2007, 卷号: 102, 期号: 11, 页码: art. no. 113521
Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Liang, JW; Yang, H
收藏  |  浏览/下载:51/5  |  提交时间:2010/03/08
High performance 1689-nm quantum well diode lasers 期刊论文
chinese optics letters, 2007, 卷号: 5, 期号: 10, 页码: 585-587
Duan, YP; Lin, T; Wang, CL; Chong, F; Ma, XY
收藏  |  浏览/下载:60/6  |  提交时间:2010/03/08
Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD 期刊论文
physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 1, 页码: 294-298
Jahn U (Jahn Uwe); Jiang DS (Jiang De-Sheng); Ploog KH (Ploog Klaus H.); Wang XL (Wang Xiaolan); Zhao DG (Zha0 Degang); Yang H (Yang, Hui)
收藏  |  浏览/下载:30/0  |  提交时间:2010/03/29
Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111) 期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 1, 页码: art.no.011914
Liu W; Zhu JJ; Jiang S; Yang H; Wang JF
收藏  |  浏览/下载:33/0  |  提交时间:2010/03/29
Influence of defects in n(-)-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors 期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 6, 页码: art.no.062106
作者:  Li XY;  Jiang DS;  Yang H;  Zhu JJ;  Zhang SM
收藏  |  浏览/下载:52/0  |  提交时间:2010/03/29
Optical analysis of dislocation-related physical processes in GaN-based epilayers 期刊论文
physica status solidi b-basic solid state physics, 2007, 卷号: 244, 期号: 8, 页码: 2878-2891
Jiang, DS (Jiang, De-Sheng); Zhao, DG (Zhao, De-Gang); Yang, H (Yang, Hui)
收藏  |  浏览/下载:47/0  |  提交时间:2010/03/29
Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition 期刊论文
materials letters, 2007, 卷号: 61, 期号: 22, 页码: 4416-4419
Sun JY (Sun Jiayin); Chen J (Chen Jing); Wang X (Wang Xi); Wang JF (Wang Jianfeng); Liu W (Liu Wei); Zhu JJ (Zhu Jianjun); Yang H (Yang Hui)
收藏  |  浏览/下载:40/0  |  提交时间:2010/03/29
Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3 mu m 期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 11, 页码: art.no.111912
Yang T (Yang, Tao); Tatebayashi J (Tatebayashi, Jun); Aoki K (Aoki, Kanna); Nishioka M (Nishioka, Masao); Arakawa Y (Arakawa, Yasuhiko)
收藏  |  浏览/下载:57/0  |  提交时间:2010/03/29
Temperature dependence of absorption edge in MOCVD grown GaN 期刊论文
journal of materials science-materials in electronics, 2007, 卷号: 18, 期号: 12, 页码: 1229-1233
Majid A (Majid Abdul); Ali A (Ali Akbar); Zhu JJ (Zhu Jianjun)
收藏  |  浏览/下载:37/0  |  提交时间:2010/03/29


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