Junctionless Coplanar-Gate Oxide-Based Thin-Film Transistors Gated by Al2O3 Proton Conducting Films on Paper Substrates

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	Junctionless Coplanar-Gate Oxide-Based Thin-Film Transistors Gated by Al2O3 Proton Conducting Films on Paper Substrates
	Wu Guo-Dong ; Zhang Jin ; Wan Xiang
刊名	CHINESE PHYSICS LETTERS
	2014
卷号	31 期号:10
中文摘要	Nanogranular Al2O3 films deposited by plasma-enhanced chemical vapor deposition show a high proton conductivity of similar to 1.25x10(-4) S/cm and a huge electric-double-layer (EDL) capacitance of similar to 4.8 mu F/cm(2) at room temperature. Using nanogranular Al2O3 proton conducting films as gate dielectrics, junctionless indium-zinc-oxide (IZO) thin-film transistors (TFTs) with a coplanar-gate configuration are fabricated. The unique feature of such junctionless TFTs is that the channel and source/drain electrodes are the same thin IZO film without any source/drain junction. Due to the strong EDL capacitive coupling triggered by mobile protons in nanogranular Al2O3, these TFTs show a low-voltage operation of 1.5 V and a high performance with a large field-effect mobility (>18 cm(2)/V.s), a small subthreshold swing (<130 mV/decade) and a high current on/off ratio (>10(6)). Our results demonstrate that such junctionless TFTs gated by Al2O3 proton conducting films have great potential applications in low-power and low-cost electronics.
公开日期	2015-09-20
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/11731]
专题	宁波材料技术与工程研究所_2014专题
推荐引用方式 GB/T 7714	Wu Guo-Dong,Zhang Jin,Wan Xiang. Junctionless Coplanar-Gate Oxide-Based Thin-Film Transistors Gated by Al2O3 Proton Conducting Films on Paper Substrates[J]. CHINESE PHYSICS LETTERS,2014,31(10).
APA	Wu Guo-Dong,Zhang Jin,&Wan Xiang.(2014).Junctionless Coplanar-Gate Oxide-Based Thin-Film Transistors Gated by Al2O3 Proton Conducting Films on Paper Substrates.CHINESE PHYSICS LETTERS,31(10).
MLA	Wu Guo-Dong,et al."Junctionless Coplanar-Gate Oxide-Based Thin-Film Transistors Gated by Al2O3 Proton Conducting Films on Paper Substrates".CHINESE PHYSICS LETTERS 31.10(2014).