Junctionless Flexible Oxide-Based Thin-Film Transistors on Paper Substrates

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	Junctionless Flexible Oxide-Based Thin-Film Transistors on Paper Substrates
	Wan Q(万青)
刊名	IEEE ELECTRON DEVICE LETTERS
	2012-12-23
卷号	41 期号:1 页码:65—67
通讯作者	万青
合作状况	李雨桐
中文摘要	Junctionless flexible oxide-based electric-doublelayer thin-film transistors (TFTs) are fabricated on paper substrates at room temperature. Channel and source/drain electrodes are realized by an indium–tin–oxide (ITO) film without any source/drain junction. Effective field-effect modulation of drain current can be obtained when the thickness of the top ITO film is decreased to 20 nm. These junctionless paper TFTs show a good device performance with a small subthreshold swing of 0.21 V/dec and a large on/off ratio of 2 × 106. Such junctionless paper TFTs can provide a new opportunity for flexible paper electronics and low-cost portable-sensor applications.
学科主题	物理化学
原文出处	其他国内刊物
公开日期	2013-12-16
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/9763]
专题	宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式 GB/T 7714	Wan Q. Junctionless Flexible Oxide-Based Thin-Film Transistors on Paper Substrates[J]. IEEE ELECTRON DEVICE LETTERS,2012,41(1):65—67.
APA	万青.(2012).Junctionless Flexible Oxide-Based Thin-Film Transistors on Paper Substrates.IEEE ELECTRON DEVICE LETTERS,41(1),65—67.
MLA	万青."Junctionless Flexible Oxide-Based Thin-Film Transistors on Paper Substrates".IEEE ELECTRON DEVICE LETTERS 41.1(2012):65—67.