Direct Determination of Band Gap of Defects in a Wide Band Gap Semiconductor

doi:10.1021/acsami.2c10143

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	Direct Determination of Band Gap of Defects in a Wide Band Gap Semiconductor
	Yan, Xuexi 2,3; Jin, Qianqian 1; Jiang, Yixiao 2,3; Yao, Tingting 2,3; Li, Xiang 2,3; Tao, Ang 2,3; Gao, Chunyang 2,3; Chen, Chunlin 2,3; Ma, Xiuliang 2,4; Ye, Hengqiang 3
刊名	ACS APPLIED MATERIALS & INTERFACES
	2022-08-17
卷号	14 期号:32 页码:36875-36881
关键词	IDBs band gap transmission electron microscopy electron energy-loss spectroscopy first-principles calculations AlN
ISSN号	1944-8244
DOI	10.1021/acsami.2c10143
英文摘要	Crystal defects play an important role in the degradation and failure of semiconductor materials and devices. Direct determination of band gap of defects is a critical step for clarifying how the defects affect the physical properties of films were grown epitaxially on single-crystal Al2O3 substrates via pulsed laser deposition. The atomic structure and band gap of three types of inversion domain boundaries (IDBs) in AlN were determined using aberration-corrected transmission electron spectroscopy. It was found that the band gap of all of the IDBs reduces evidently compared to that of the bulk AlN. The maximum band gap reduction of the IDBs is 1.0 eV. First-principles calculations revealed that the band gap reduction of the IDBs is mainly due to the rise of pz orbital at the valence band maximum, which originates from the elongated Al-N bonds along the [0001] direction at the IDBs. The successful band gap determination of defects paves an avenue for quantitatively evaluating the effect of defects on the performance of semiconductor materials and devices.
WOS研究方向	Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000837853800001
内容类型	期刊论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/159855]
专题	材料科学与工程学院_特聘教授组
作者单位	1.Guangxi Univ Sci & Technol, Sch Microelect & Mat Engn, Liuzhou 545006, Peoples R China; 2.Univ Sci & Technol China, Inst Met Res, Chinese Acad Sci, Sch Mat Sci & Engn,Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China; 3.Jihua Lab, Foshan 528251, Peoples R China; 4.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Peoples R China
推荐引用方式 GB/T 7714	Yan, Xuexi,Jin, Qianqian,Jiang, Yixiao,et al. Direct Determination of Band Gap of Defects in a Wide Band Gap Semiconductor[J]. ACS APPLIED MATERIALS & INTERFACES,2022,14(32):36875-36881.
APA	Yan, Xuexi.,Jin, Qianqian.,Jiang, Yixiao.,Yao, Tingting.,Li, Xiang.,...&Ye, Hengqiang.(2022).Direct Determination of Band Gap of Defects in a Wide Band Gap Semiconductor.ACS APPLIED MATERIALS & INTERFACES,14(32),36875-36881.
MLA	Yan, Xuexi,et al."Direct Determination of Band Gap of Defects in a Wide Band Gap Semiconductor".ACS APPLIED MATERIALS & INTERFACES 14.32(2022):36875-36881.