Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides

doi:10.1038/s41377-021-00503-y

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	Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides
	K. Jiang; X. Sun; Z. Shi; H. Zang; J. Ben; H.-X. Deng and D. Li
刊名	Light: Science and Applications
	2021
卷号	10 期号:1
ISSN号	20955545
DOI	10.1038/s41377-021-00503-y
英文摘要	Ultra-wide band-gap nitrides have huge potential in micro- and optoelectronics due to their tunable wide band-gap, high breakdown field and energy density, excellent chemical and thermal stability. However, their application has been severely hindered by the low p-doping efficiency, which is ascribed to the ultrahigh acceptor activation energy originated from the low valance band maximum. Here, a valance band modulation mode is proposed and a quantum engineering doping method is conducted to achieve high-efficient p-type ultra-wide band-gap nitrides, in which GaN quantum-dots are buried in nitride matrix to produce a new band edge and thus to tune the dopant activation energy. By non-equilibrium doping techniques, quantum engineering doped AlGaN:Mg with Al content of 60% is successfully fabricated. The Mg activation energy has been reduced to about 21 meV, and the hole concentration reaches higher than 1018 cm3 at room temperature. Also, similar activation energies are obtained in AlGaN with other Al contents such as 50% and 70%, indicating the universality of the quantum engineering doping method. Moreover, deep-ultraviolet light-emission diodes are fabricated and the improved performance further demonstrates the validity and merit of the method. With the quantum material growth techniques developing, this method would be prevalently available and tremendously stimulate the promotion of ultra-wide band-gap semiconductor-based devices. 2021, The Author(s).
URL标识	查看原文
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/65565]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	K. Jiang,X. Sun,Z. Shi,et al. Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides[J]. Light: Science and Applications,2021,10(1).
APA	K. Jiang,X. Sun,Z. Shi,H. Zang,J. Ben,&H.-X. Deng and D. Li.(2021).Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides.Light: Science and Applications,10(1).
MLA	K. Jiang,et al."Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides".Light: Science and Applications 10.1(2021).