Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors

doi:10.1364/PRJ.7.001127

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors
	Y.Wu; Z.Li; K.-W.Ang; Y.Jia; Z.Shi; Z.Huang; W.Yu; X.Sun; X.Liu; D.Li
刊名	Photonics Research
	2019
卷号	7 期号:10 页码:1127-1133
关键词	Monolithic integrated circuits,Chemical vapor deposition,Gallium nitride,III-V semiconductors,Integration,Layered semiconductors,Military applications,Molybdenum compounds,Optical communication,Photodetectors,Photons,Wide band gap semiconductors
ISSN号	23279125
DOI	10.1364/PRJ.7.001127
英文摘要	With the increasing demand for high integration and multi-color photodetection for both military and civilian applications, the research of multi-wavelength detectors has become a new research hotspot. However, current research has been mainly in visible dual- or multi-wavelength detectors, while integration of both visible light and ultraviolet (UV) dual-wavelength detectors has rarely been studied. In this work, large-scale and high-quality monolayer MoS2 was grown by the chemical vapor deposition method on transparent free-standing GaN substrate. Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors was demonstrated using common semiconductor fabrication technologies such as photolithography, argon plasma etching, and metal deposition. High performance of a 280 nm and 405 nm dual-wavelength photodetector was realized. The responsivity of the UV detector reached 172.12 A/W, while that of the visible detector reached 17.5 A/W. Meanwhile, both photodetectors achieved high photocurrent gain, high external quantum efficiency, high normalized detection rate, and low noise equivalent power. Our study extends the future application of dual-wavelength detectors for image sensing and optical communication. 2019 Chinese Laser Press
URL标识	查看原文
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/62940]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y.Wu,Z.Li,K.-W.Ang,et al. Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors[J]. Photonics Research,2019,7(10):1127-1133.
APA	Y.Wu.,Z.Li.,K.-W.Ang.,Y.Jia.,Z.Shi.,...&D.Li.(2019).Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors.Photonics Research,7(10),1127-1133.
MLA	Y.Wu,et al."Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors".Photonics Research 7.10(2019):1127-1133.