Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices

	Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices
	Chaohui Su 1; Linbo Shan 1; Dongliang Yang 1; Yanfei Zhao 1; Yujun Fu 1; Jiande Liu 1,3; Guangan Zhang 2; Qi Wang 1; Deyan He 1
刊名	Microelectronic Engineering
	2021-07-27
期号	247 页码:111600
WOS记录号	WOS:000683574400007
内容类型	期刊论文
源URL	[http://ir.licp.cn/handle/362003/28010]
专题	兰州化学物理研究所_固体润滑国家重点实验室
通讯作者	Qi Wang
作者单位	1.School of Physical Science and Technology, Lanzhou University 2.Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemicals Physics, Chinese Academy of Sciences 3.Institute of Modern Physics, Chinese Academy of Sciences
推荐引用方式 GB/T 7714	Chaohui Su,Linbo Shan,Dongliang Yang,et al. Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices[J]. Microelectronic Engineering,2021(247):111600.
APA	Chaohui Su.,Linbo Shan.,Dongliang Yang.,Yanfei Zhao.,Yujun Fu.,...&Deyan He.(2021).Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices.Microelectronic Engineering(247),111600.
MLA	Chaohui Su,et al."Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices".Microelectronic Engineering .247(2021):111600.