Evidence of defect-annealing effect in swift heavy-ion-irradiated indium phosphide

doi:10.1002/jrs.6324

	Evidence of defect-annealing effect in swift heavy-ion-irradiated indium phosphide
	Hu, Peipei 1; Xu, Lijun 1; Zhai, Pengfei 1,2; Zeng, Jian 1,2; Zhang, Shengxia 1,2; Maaz, Khan 3; Ai, Wensi 1,2; Li, Zongzhen 1; Sun, Youmei 1,2; He, Yuan 1,2
刊名	JOURNAL OF RAMAN SPECTROSCOPY
	2022-03-03
页码	9
关键词	defect-annealing heavy ions InP Raman intensity
ISSN号	0377-0486
DOI	10.1002/jrs.6324
通讯作者	Liu, Jie(j.liu@impcas.ac.cn)
英文摘要	Single-crystal indium phosphide (InP) was irradiated by swift heavy ions (Ar-40, Fe-56, Kr-86, Ta-181, and Bi-209) with different energies. The damage evolutions have been investigated by means of Raman spectroscopy and electron microscopy. Analysis of Raman intensity ratio (LO ' peak to LO peak [I-LO '/I-LO]) provides a new insight into the lattice quality of the irradiated samples. The defect-activated longitudinal optical mode (LO ') appeared and then disappeared with increasing ion fluences, and it seems that the peak point of I-LO '/I-LO is electronic energy loss dependent. The phenomenological model suggests that the LO ' peak intensity is positively correlated with the proportion of the activated regions, where the crystals were not completely disordered, but still many defects were created. Furthermore, the TEM images showed that the tracks closely overlapped, resulting in the decrease of activated regions, which implies that there is a competitive mechanism between the generation and annealing of the defects. It also provides direct evidence that the annealing effect of the defects has occurred during the swift heavy-ion irradiation.
资助项目	Chinese Academy of Sciences[2020412] ; China Postdoctoral Science Foundation[2020M673539] ; National Postdoctoral Program for Innovative Talents[BX20200340] ; National Natural Science Foundation of China[12035019] ; National Natural Science Foundation of China[12075290]
WOS关键词	RAMAN-SCATTERING ; TRACK FORMATION ; PICOSECOND RAMAN ; DAMAGE FORMATION ; CRYSTALLINE INP ; GAAS ; EVOLUTION ; SPECTRUM ; SI
WOS研究方向	Spectroscopy
语种	英语
出版者	WILEY
WOS记录号	WOS:000763735500001
资助机构	Chinese Academy of Sciences ; China Postdoctoral Science Foundation ; National Postdoctoral Program for Innovative Talents ; National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/141903]
专题	中国科学院近代物理研究所
通讯作者	Liu, Jie
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Univ Chinese Acad Sci UCAS, Sch Nucl Sci & Technol, Beijing, Peoples R China 3.PINSTECH, Phys Div, Islamabad, Pakistan
推荐引用方式 GB/T 7714	Hu, Peipei,Xu, Lijun,Zhai, Pengfei,et al. Evidence of defect-annealing effect in swift heavy-ion-irradiated indium phosphide[J]. JOURNAL OF RAMAN SPECTROSCOPY,2022:9.
APA	Hu, Peipei.,Xu, Lijun.,Zhai, Pengfei.,Zeng, Jian.,Zhang, Shengxia.,...&Liu, Jie.(2022).Evidence of defect-annealing effect in swift heavy-ion-irradiated indium phosphide.JOURNAL OF RAMAN SPECTROSCOPY,9.
MLA	Hu, Peipei,et al."Evidence of defect-annealing effect in swift heavy-ion-irradiated indium phosphide".JOURNAL OF RAMAN SPECTROSCOPY (2022):9.