Adjustment of Al atom migration ability and its effect on the surface morphology of AlN grown on sapphire by metal–organic chemical vapor deposition

	Adjustment of Al atom migration ability and its effect on the surface morphology of AlN grown on sapphire by metal–organic chemical vapor deposition
	Zhang, Yuheng; Yang, Jing; Zhao, Degang; Liang, Feng; Chen, Ping; Liu, Zongshun
刊名	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
	2021
卷号	36 期号:10 页码:105010
公开日期	2021
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/30866]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Zhang, Yuheng; Yang, Jing; Zhao, Degang; Liang, Feng; Chen, Ping; Liu, Zongshun. Adjustment of Al atom migration ability and its effect on the surface morphology of AlN grown on sapphire by metal–organic chemical vapor deposition[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2021,36(10):105010.
APA	Zhang, Yuheng; Yang, Jing; Zhao, Degang; Liang, Feng; Chen, Ping; Liu, Zongshun.(2021).Adjustment of Al atom migration ability and its effect on the surface morphology of AlN grown on sapphire by metal–organic chemical vapor deposition.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,36(10),105010.
MLA	Zhang, Yuheng; Yang, Jing; Zhao, Degang; Liang, Feng; Chen, Ping; Liu, Zongshun."Adjustment of Al atom migration ability and its effect on the surface morphology of AlN grown on sapphire by metal–organic chemical vapor deposition".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 36.10(2021):105010.