Graphene electrical properties modulated by swift heavy ion irradiation

doi:10.1016/j.carbon.2019.08.006

	Graphene electrical properties modulated by swift heavy ion irradiation
	Zeng, Jian 1; Liu, Jie 1; Zhang, Shengxia 1; Duan, Jinglai 1; Zhai, Pengfei 1; Yao, Huijun 1; Hu, Peipei 1,2; Maaz, Khan 3; Sun, Youmei 1
刊名	CARBON
	2019-12-01
卷号	154 页码:244-253
ISSN号	0008-6223
DOI	10.1016/j.carbon.2019.08.006
通讯作者	Zeng, Jian(zengjian@impcas.ac.cn)
英文摘要	Changes in electrical properties of graphene devices induced by the energetic ion irradiation are very important for their application in harsh radiation environment. This paper presents the modulating behavior of electrical properties of graphene-based devices induced by swift heavy ions (SHIs). Graphene field effect transistors (GFETs) were irradiated by 1.79 GeV Ta ions and it was found that at lower fluence (10(9)-10 ions/cm(2)), the SHIs irradiation can effectively optimize the performance of GFETs, while at higher fluence (similar to 10(11) ions/cm(2)), the electrical properties of the devices were significantly deteriorated after the irradiation process. The effective length and width of the graphene strip and irradiation fluence are the main factors that determine the improvement in performance of GFETs. Raman spectroscopy was employed to figure out the correlation between the initial defect density in graphene and changes in electrical performance of GFETs. It was shown that the competition among various factors such as the doping, local annealing and defect creation dominates the GFET performance. This work explores the best conditions for improving the electrical properties of GFETs and provides an important reference data for the utilization of graphene based irradiated devices in aerospace electronics. (C) 2019 Elsevier Ltd. All rights reserved.
资助项目	National Natural Science Foundation of China[11505243] ; National Natural Science Foundation of China[11675233] ; National Natural Science Foundation of China[11705246] ; National Natural Science Foundation of China[11775279] ; Key Research Program of Frontier Sciences, CAS[QYZDB-SSW-SLH010]
WOS关键词	RAMAN-SCATTERING ; DEFECTS ; METALS
WOS研究方向	Chemistry ; Materials Science
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000488203600029
资助机构	National Natural Science Foundation of China ; Key Research Program of Frontier Sciences, CAS
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/141758]
专题	中国科学院近代物理研究所
通讯作者	Zeng, Jian
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.PINSTECH, Phys Div, Nanomat Res Grp, Islamabad, Pakistan
推荐引用方式 GB/T 7714	Zeng, Jian,Liu, Jie,Zhang, Shengxia,et al. Graphene electrical properties modulated by swift heavy ion irradiation[J]. CARBON,2019,154:244-253.
APA	Zeng, Jian.,Liu, Jie.,Zhang, Shengxia.,Duan, Jinglai.,Zhai, Pengfei.,...&Sun, Youmei.(2019).Graphene electrical properties modulated by swift heavy ion irradiation.CARBON,154,244-253.
MLA	Zeng, Jian,et al."Graphene electrical properties modulated by swift heavy ion irradiation".CARBON 154(2019):244-253.