Irradiation-induced microstructure damage in He-irradiated 3C-SiC at 1000 degrees C

doi:10.1016/j.jeurceramsoc.2019.11.026

	Irradiation-induced microstructure damage in He-irradiated 3C-SiC at 1000 degrees C
	Li, Bingsheng 1,2; Liu, Huiping 2; Shen, Tielong 2; Xu, Lijun 2; Wang, Jie 1; Zhao, Fuqiang 3; Peng, Dingping 3; Li, Junhan 3; Sheng, Yanbin 2; Xiong, Anli 3
刊名	JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
	2020-04-01
卷号	40 期号:4 页码:1014-1022
关键词	3C-SiC He irradiation Microstructure Stacking faults High temperature
ISSN号	0955-2219
DOI	10.1016/j.jeurceramsoc.2019.11.026
通讯作者	Li, Bingsheng(libingshengmvp@163.com)
英文摘要	The effect of the high-temperature helium irradiation on microstructural evolution of 3C-SiC was investigated by the combination of Raman spectroscopy, conventional transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). 3C-SiC wafers were irradiated with 130 keV He+ ions at fluences of 2 x 10(16) He+/cm(2), 4 x 10(16) He+/cm(2) and 2 x 10(17) He+/cm(2) at 1000 degrees C. Helium bubbles, dislocation loops, and their interaction with the stacking faults were focused on and characterized by TEM. Helium bubbles preferentially nucleate and grow on stacking faults. Bubble links on the (100) plane in 3C-SiC are formed. In addition, stacking faults can effectively trap irradiation-induced lattice defects to enhance their recovery. The type of irradiation -induced lattice defects and elemental distribution are also investigated. The research results are valuable for the 3C-SiC used in the advanced nuclear energy systems.
资助项目	National Natural Science Foundation of China[U1832133] ; National Natural Science Foundation of China[11475229] ; Doctor Research Foundation of Southwest University of Science and Technology[18zx7141]
WOS关键词	MECHANICAL-PROPERTIES ; SILICON-CARBIDE ; HEAVY-ION ; COMPOSITES ; RAMAN ; IMPLANTATION ; CHALLENGES ; EVOLUTION ; CLUSTERS ; CAVITIES
WOS研究方向	Materials Science
语种	英语
出版者	ELSEVIER SCI LTD
WOS记录号	WOS:000514747500009
资助机构	National Natural Science Foundation of China ; Doctor Research Foundation of Southwest University of Science and Technology
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/141077]
专题	中国科学院近代物理研究所
通讯作者	Li, Bingsheng
作者单位	1.Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Sichuan, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 3.Southwest Univ Sci & Technol, Sch Natl Def Sci & Technol, Mianyang 621010, Sichuan, Peoples R China
推荐引用方式 GB/T 7714	Li, Bingsheng,Liu, Huiping,Shen, Tielong,et al. Irradiation-induced microstructure damage in He-irradiated 3C-SiC at 1000 degrees C[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,2020,40(4):1014-1022.
APA	Li, Bingsheng.,Liu, Huiping.,Shen, Tielong.,Xu, Lijun.,Wang, Jie.,...&Xiong, Anli.(2020).Irradiation-induced microstructure damage in He-irradiated 3C-SiC at 1000 degrees C.JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,40(4),1014-1022.
MLA	Li, Bingsheng,et al."Irradiation-induced microstructure damage in He-irradiated 3C-SiC at 1000 degrees C".JOURNAL OF THE EUROPEAN CERAMIC SOCIETY 40.4(2020):1014-1022.