High-performance mid-infrared photodetection based on Bi2Se3 maze and free-standing nanoplates

doi:10.1088/1361-6528/abcd64

	High-performance mid-infrared photodetection based on Bi2Se3 maze and free-standing nanoplates
	Luo, Shi 1,2,4; Li, JiaLu 2,3; Sun, Tai 2; Liu, Xiangzhi 2; Wei, Dacheng 1,4; Zhou, Dahua 2; Shen, Jun 2; Wei, Dapeng 2
刊名	NANOTECHNOLOGY
	2021-03-05
卷号	32 期号:10 页码:9
关键词	photodetector Bi2Se3 infrared 2D materials
ISSN号	0957-4484
DOI	10.1088/1361-6528/abcd64
通讯作者	Shen, Jun(shenjun@cigit.ac.cn) ; Wei, Dapeng(dpwei@cigit.ac.cn)
英文摘要	The pursuit of optoelectronic devices operating in mid-infrared regime is driven by both fundamental interests and commercial applications. The narrow bandgap (0.3 eV) of layered Bi2Se3 makes it a promising material for mid-infrared photodetection. However, the weak absorption of mid-infrared optical power and high dark current level restrict its performance. Here, a supply-control technique is applied to modulate the growth mode of Bi2Se3 crystal, and Bi2Se3 crystals with various morphologies are obtained. The nanoplates pattern transits from maze to freestanding when source mass was tuned. Due to the strong infrared absorption and photoelectric conversion efficiency of vertical Bi2Se3 nanoplates, the as-prepared vertical Bi2Se3 nanoplates/Si heterojunction shows excellent photoresponse and extremely low dark current. Among these devices based on different Bi2Se3 morphologies, freestanding nanoplates show the optimal mid-infrared characteristics, namely a photo-to-dark ratio of 2.0 x 10(4), a dark current of 0.21 pA, a response time of 23 ms, a specific detectivity of 6.1 x 10(10) Jones (calculated) and 1.2 x 10(10) Jones (measured) under 2.7 mu m illumination and at room temperature. Notably, the specific detectivity of our devices are comparable to commercial InGaAs photodetectors. With the tunable- morphology growing technique and excellent photoresponding characteristics, Bi2Se3 nanomaterials are worth attention in optoelectronic field.
资助项目	NSFC[61705229] ; Youth Innovation Promotion Association of CAS[2015316] ; Youth Innovation Promotion Association of CAS[2018416] ; Project of Chongqing brain science Collaborative Innovation Center ; Project of CAS Western Young Scholar ; Project of CQ CSTC[cstc2017zdcy-zdyfX0001] ; Project of CQ CSTC[cstc2017zdcy-zdyfX0078]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000599468700001
内容类型	期刊论文
源URL	[http://119.78.100.138/handle/2HOD01W0/12413]
专题	中国科学院重庆绿色智能技术研究院
通讯作者	Shen, Jun; Wei, Dapeng
作者单位	1.Fudan Univ, State Key Lab Mol Engn Polymers, Shanghai 200433, Peoples R China 2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China 3.Harbin Inst Technol, Dept Phys, Harbin 150001, Peoples R China 4.Fudan Univ, Dept Macromol Sci, Shanghai 200433, Peoples R China
推荐引用方式 GB/T 7714	Luo, Shi,Li, JiaLu,Sun, Tai,et al. High-performance mid-infrared photodetection based on Bi2Se3 maze and free-standing nanoplates[J]. NANOTECHNOLOGY,2021,32(10):9.
APA	Luo, Shi.,Li, JiaLu.,Sun, Tai.,Liu, Xiangzhi.,Wei, Dacheng.,...&Wei, Dapeng.(2021).High-performance mid-infrared photodetection based on Bi2Se3 maze and free-standing nanoplates.NANOTECHNOLOGY,32(10),9.
MLA	Luo, Shi,et al."High-performance mid-infrared photodetection based on Bi2Se3 maze and free-standing nanoplates".NANOTECHNOLOGY 32.10(2021):9.