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	Integrated semiconductor light emitting device
	TAWARA SHUICHI; KITAMURA MITSUHIRO
	1989-05-11
著作权人	NEC CORP
专利号	JP1989119084A
国家	日本
文献子类	发明申请
其他题名	Integrated semiconductor light emitting device
英文摘要	PURPOSE:To further improve the uniformity of the intensity distribution of an emitted light by preventing power supply voltage from being dropped owing to wirings by forming part of an electrode wiring with use of a superconducting material and employing a Josephson junction as a constant voltage source. CONSTITUTION:YBa2Cu3O7-x is employed as a superconducting material for use in wirings, and any coating is formed by techniques such as sputtering, electron beam deposition, and ion beam deposition, etc. Associated patterning is carried out by dry etching or wet etching. The material exhibits superconducting characteristics at a temperature less than about 90K, and prevents any voltage drop from being produced owing to wiring resistance at 77 K. Upper and lower electrodes 21, 22 of a Josephson junction 14 used as a constant voltage source are constructed by making use of the same material and process as in the wiring material. A tunneling barrier layer 23 including an insulating film comprising MgO and Al2O3 and having the thickness ranging from several A to several tens A. The insulating layer 24 is not essential but for use in flattening. Gap voltage of the single Josephson junction is considered to be about 20-40mV. Series-connection of the junctions amounting about 20-50assures gap voltage of about 1V as the constant voltage source.
公开日期	1989-05-11
申请日期	1987-10-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88739]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	TAWARA SHUICHI,KITAMURA MITSUHIRO. Integrated semiconductor light emitting device. JP1989119084A. 1989-05-11.

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