Atomic-Scale Visualization and Quantification of Configurational Entropy in Relation to Thermal Conductivity: A Proof-of-Principle Study in t-GeSb2Te4 | |
Chen, Yongjin1,2,3,12,13; Zhang, Bin4; Zhang, Yongsheng5,6; Wu, Hong12,13; Peng, Kunling12,13; Yang, Hengquan12,13; Zhang, Qing1,2; Liu, Xiaopeng5,6,12,13; Chai, Yisheng12,13; Lu, Xu12,13 | |
刊名 | ADVANCED SCIENCE |
2021-02-08 | |
关键词 | configurational entropy single crystalline GeSb2Te4 thermal conductivity |
DOI | 10.1002/advs.202002051 |
通讯作者 | Han, Xiaodong(xdhan@bjut.edu.cn) ; Zhou, Xiaoyuan(xiaoyuan2013@cqu.edu.cn) |
英文摘要 | It remains a daunting task to quantify the configurational entropy of a material from atom-revolved electron microscopy images and correlate the results with the material's lattice thermal conductivity, which strides across statics, dynamics, and thermal transport of crystal lattice over orders of magnitudes in length and time. Here, a proof-of-principle study of atomic-scale visualization and quantification of configurational entropy in relation to thermal conductivity in single crystalline trigonal GeSb2Te4 (aka t-GeSb2Te4) with native atomic site disorder is reported. A concerted effort of large t-GeSb2Te4 single crystal growth, in-lab developed analysis procedure of atomic column intensity, the visualization and quantification of configurational entropy including corresponding modulation, and thermal transport measurements enable an entropic "bottom-up" perspective to the lattice thermal conductivity of t-GeSb2Te4. It is uncovered that the configurational entropy increases phonon scattering and reduces phonon mean free path as well as promotes anharmonicity, thereby giving rise to low lattice thermal conductivity and promising thermoelectric performance. The current study sheds lights on an atomic scale bottom-up configurational entropy design in diverse regimes of structural and functional materials research and applications. |
资助项目 | National Natural Science Foundation of China[11674040] ; National Natural Science Foundation of China[11674384] ; National Natural Science Foundation of China[51672270] ; National Natural Science Foundation of China[11874356] ; National Natural Science Foundation of China[51772035] ; National Natural Science Foundation of China[11534015] ; National Natural Science Foundation of China[11474283] ; National Natural Science Foundation of China[11774347] ; National Natural Science Foundation of China[11904039] ; Fundamental Research Funds for the Central Universities[2018CDQYWL0048] ; Fundamental Research Funds for the Central Universities[106112017CDJQJ308821] ; Fundamental Research Funds for the Central Universities[2018CDPTCG0001/26] ; Key Research Program of Frontier Sciences, CAS[QYZDB-SSW-SLH016] ; National Key R&D Program of China[2017YFB0305501] ; National Natural Science Foundation of China (NSFC)[11327901] ; National Natural Science Foundation of China (NSFC)[51471008] |
WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science |
语种 | 英语 |
出版者 | WILEY |
WOS记录号 | WOS:000615803800001 |
资助机构 | National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities ; Key Research Program of Frontier Sciences, CAS ; National Key R&D Program of China ; National Natural Science Foundation of China (NSFC) |
内容类型 | 期刊论文 |
源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/120619] |
专题 | 中国科学院合肥物质科学研究院 |
通讯作者 | Han, Xiaodong; Zhou, Xiaoyuan |
作者单位 | 1.Beijing Univ Technol, Beijing Key Lab, Beijing 100124, Peoples R China 2.Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China 3.Ctr High Pressure Sci & Technol Adv Res, Beijing 100094, Peoples R China 4.Chongqing Univ, Analyt & Testing Ctr, Chongqing 401331, Peoples R China 5.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 6.Univ Sci & Technol China, Grad Sch, Sci Isl Branch, Hefei 230026, Peoples R China 7.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China 8.Univ Chinese Acad Sci, Beijing 100044, Peoples R China 9.Zhejiang Univ, Ctr Electron Microscopy, Hangzhou 310027, Peoples R China 10.Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China |
推荐引用方式 GB/T 7714 | Chen, Yongjin,Zhang, Bin,Zhang, Yongsheng,et al. Atomic-Scale Visualization and Quantification of Configurational Entropy in Relation to Thermal Conductivity: A Proof-of-Principle Study in t-GeSb2Te4[J]. ADVANCED SCIENCE,2021. |
APA | Chen, Yongjin.,Zhang, Bin.,Zhang, Yongsheng.,Wu, Hong.,Peng, Kunling.,...&Zhou, Xiaoyuan.(2021).Atomic-Scale Visualization and Quantification of Configurational Entropy in Relation to Thermal Conductivity: A Proof-of-Principle Study in t-GeSb2Te4.ADVANCED SCIENCE. |
MLA | Chen, Yongjin,et al."Atomic-Scale Visualization and Quantification of Configurational Entropy in Relation to Thermal Conductivity: A Proof-of-Principle Study in t-GeSb2Te4".ADVANCED SCIENCE (2021). |
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