Two-Dimensional IV-V Monolayers with Highly Anisotropic Carrier Mobility and Electric Transport Properties | |
Li, Pengfei2,3; Wu, Wenjun1; Xu, Yuehua1; Liu, Jun2,3; Wu, Shouliang2,3; Ye, Yixing2,3; Liang, Changhao2,3; Zeng, Xiao Cheng4 | |
刊名 | JOURNAL OF PHYSICAL CHEMISTRY LETTERS |
2021-01-28 | |
卷号 | 12 |
ISSN号 | 1948-7185 |
DOI | 10.1021/acs.jpclett.0c03656 |
通讯作者 | Xu, Yuehua(yhxu@cczu.edu.cn) ; Liang, Changhao(chliang@issp.ac.cn) ; Zeng, Xiao Cheng(xzeng1@unl.edu) |
英文摘要 | Two dimensional (2D) semiconductors with anisotropic properties (e.g., mechanical, optical, and electric transport anisotropy) have long been sought in materials research, especially 2D semiconducting sheets with strong anisotropy in carrier mobility, e.g., n-type in one direction and p-type in another direction. Here, we report a comprehensive study of the carrier mobility and electric transport anisotropy of a class of 2D IV-V monolayers, XAs (X = Si or Ge), by using density functional theory methods coupled with deformation potential theory and non-equilibrium Green's function method. We find that the polarity of room-temperature carrier mobility mu of the 2D XAs monolayer is highly dependent on the lattice direction. In particular, for the SiAs monolayer, the mu values of the electron (e) and hole (h) are 1.25 x 10(3) and 0.39 x 10(3) cm(2) V-1 s(-1), respectively, in the a direction and 0.31 x 10(3) and 1.12 x 10(3) cm(2) s(-1), respectively, for the b direction. The computed electric transport properties also show that the SiAs monolayer exhibits strong anisotropy in the biased voltage in the range of -1 to 1 V. In particular, the current reflects the ON state in the a direction but the OFF state in the b direction. In find that the uniaxial strain can significantly improve the electric transport performance and even lead to the negative differential conductance at 10% strain. The unique transport properties of the 2D XAs monolayers can be exploited for potential applications in nanoelectronics. |
资助项目 | National Natural Science Foundation of China (NSFC)[11604320] ; National Natural Science Foundation of China (NSFC)[51571186] ; National Natural Science Foundation of China (NSFC)[11674321] ; National Natural Science Foundation of China (NSFC)[51801205] ; key research and development program of Anhui province[201904a05020049] ; National Natural Science Foundation of China[51772213] |
WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
语种 | 英语 |
出版者 | AMER CHEMICAL SOC |
WOS记录号 | WOS:000614318900014 |
资助机构 | National Natural Science Foundation of China (NSFC) ; key research and development program of Anhui province ; National Natural Science Foundation of China |
内容类型 | 期刊论文 |
源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/120209] |
专题 | 中国科学院合肥物质科学研究院 |
通讯作者 | Xu, Yuehua; Liang, Changhao; Zeng, Xiao Cheng |
作者单位 | 1.Changzhou Univ, Sch Microelect & Control Engn, Changzhou 213164, Jiangsu, Peoples R China 2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 3.Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanotechnol, Hefei 230031, Peoples R China 4.Univ Nebraska Lincoln, Dept Chem, Lincoln, NE 68588 USA |
推荐引用方式 GB/T 7714 | Li, Pengfei,Wu, Wenjun,Xu, Yuehua,et al. Two-Dimensional IV-V Monolayers with Highly Anisotropic Carrier Mobility and Electric Transport Properties[J]. JOURNAL OF PHYSICAL CHEMISTRY LETTERS,2021,12. |
APA | Li, Pengfei.,Wu, Wenjun.,Xu, Yuehua.,Liu, Jun.,Wu, Shouliang.,...&Zeng, Xiao Cheng.(2021).Two-Dimensional IV-V Monolayers with Highly Anisotropic Carrier Mobility and Electric Transport Properties.JOURNAL OF PHYSICAL CHEMISTRY LETTERS,12. |
MLA | Li, Pengfei,et al."Two-Dimensional IV-V Monolayers with Highly Anisotropic Carrier Mobility and Electric Transport Properties".JOURNAL OF PHYSICAL CHEMISTRY LETTERS 12(2021). |
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