Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs | |
Linzhi Peng ; Xiuli Li ; Jun Zheng ; Xiangquan Liu ; Mingming Li ; Zhi Liu ; Chunlai Xue ; Yuhua Zuo ; Buwen Cheng | |
刊名 | Journal of Luminescence |
2020 | |
卷号 | 228页码:117539 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/30008] |
专题 | 半导体研究所_集成光电子学国家重点实验室 |
推荐引用方式 GB/T 7714 | Linzhi Peng ; Xiuli Li ; Jun Zheng ; Xiangquan Liu ; Mingming Li ; Zhi Liu ; Chunlai Xue ; Yuhua Zuo ; Buwen Cheng. Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs[J]. Journal of Luminescence,2020,228:117539. |
APA | Linzhi Peng ; Xiuli Li ; Jun Zheng ; Xiangquan Liu ; Mingming Li ; Zhi Liu ; Chunlai Xue ; Yuhua Zuo ; Buwen Cheng.(2020).Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs.Journal of Luminescence,228,117539. |
MLA | Linzhi Peng ; Xiuli Li ; Jun Zheng ; Xiangquan Liu ; Mingming Li ; Zhi Liu ; Chunlai Xue ; Yuhua Zuo ; Buwen Cheng."Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs".Journal of Luminescence 228(2020):117539. |
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