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	Method for a GAN vertical microcavity surface emitting laser (VCSEL)
	HAN, JUNG; LIN, CHIA-FENG; CHEN, DANTI
	2015-10-22
著作权人	YALE UNIVERSITY
专利号	US20150303655A1
国家	美国
文献子类	发明申请
其他题名	Method for a GAN vertical microcavity surface emitting laser (VCSEL)
英文摘要	Methods and structures for forming vertical-cavity light-emitting devices are described. An n-side or bottom-side layer may be laterally etched to form a porous semiconductor region and converted to a porous oxide. The porous oxide can provide a current-blocking and guiding layer that aids in directing bias current through an active area of the light-emitting device. Distributed Bragg reflectors may be fabricated on both sides of the active region to form a vertical-cavity surface-emitting laser. The light-emitting devices may be formed from III-nitride materials.
公开日期	2015-10-22
申请日期	2015-04-15
状态	申请中
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/63782]
专题	半导体激光器专利数据库
作者单位	YALE UNIVERSITY
推荐引用方式 GB/T 7714	HAN, JUNG,LIN, CHIA-FENG,CHEN, DANTI. Method for a GAN vertical microcavity surface emitting laser (VCSEL). US20150303655A1. 2015-10-22.

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