Optical transitions in cubic GaN grown by metalorganic chemical vapor deposition on GaAs (100) substrate

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	Optical transitions in cubic GaN grown by metalorganic chemical vapor deposition on GaAs (100) substrate
	Chen Y ; Li GH ; Han HX ; Wang ZP ; Xu DP ; Yang H
刊名	chinese physics letters
	2000
卷号	17 期号:8 页码:612-614
关键词	MOLECULAR-BEAM EPITAXY PHOTOLUMINESCENCE
ISSN号	0256-307x
通讯作者	chen y,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china.
中文摘要	photoluminescence measurements have been performed on cubic gan films with carrier concentration as low as 3 x 10(13) cm(-3). from the temperature and excitation intensity dependence, the emission lines at 3.268, 3.150 and 3.081 ev were assigned to the excitonic, donor-acceptor pair, and free-to-acceptor transitions, respectively additionally, we observed two additional emission lines at 2.926 and 2.821 ev, and suggested that they belong to donor-acceptor pair transitions. furthermore, from the temperature dependence of integral intensities, we confirmed that three donor-acceptor pair transitions (3.150, 2.926, and 2.821 ev) are from a common shallow donor to three different accepters. the excitonic emission at 3.216 ev has a full-width-at-half-maximum value of 41 mev at room temperature, which indicates a good optical quality of our sample.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12468]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen Y,Li GH,Han HX,et al. Optical transitions in cubic GaN grown by metalorganic chemical vapor deposition on GaAs (100) substrate[J]. chinese physics letters,2000,17(8):612-614.
APA	Chen Y,Li GH,Han HX,Wang ZP,Xu DP,&Yang H.(2000).Optical transitions in cubic GaN grown by metalorganic chemical vapor deposition on GaAs (100) substrate.chinese physics letters,17(8),612-614.
MLA	Chen Y,et al."Optical transitions in cubic GaN grown by metalorganic chemical vapor deposition on GaAs (100) substrate".chinese physics letters 17.8(2000):612-614.