Metal catalysis-free, direction-controlled planar growth of single-crystalline alpha-Si3N4 nanowires on Si(100) substrate

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Metal catalysis-free, direction-controlled planar growth of single-crystalline alpha-Si3N4 nanowires on Si(100) substrate
	Wang XX (Wang Xiaoxin) ; Liu JF (Liu Jifeng) ; Cheng BW (Cheng Buwen) ; Yu JZ (Yu Jinzhong) ; Wang QM (Wang Qiming)
刊名	nanotechnology
	2006
卷号	17 期号:15 页码:3989-3993
关键词	SILICON-NITRIDE NANOWIRES ARRAYS SI3N4 SI
ISSN号	0957-4484
通讯作者	wang, xx, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. e-mail: wangxiaoxin@tsinghua.org.cn ; jfliu01@mit.edu
中文摘要	single-crystalline alpha-si3n4 nanowires are controlled to grow perpendicular to the wet-etched trenches in the sio0.94 film on the plane of the si substrate without metal catalysis. a detailed characterization is carried out by scanning electron microscopy (sem) and transmission electron microscopy (tem). the photoluminescence at 600 nm from alpha-si3n4 nanowires is attributed to the recombination at the defect state formed by the si dangling bond n3 equivalent to si-center dot. the growth mechanism is considered to be related to the catalysis and nitridation of sio nanoclusters preferably re-deposited around the inner corner of the trenches, as well as faster si diffusion along the slanting side walls of the trenches. this simple direction-controlled growth method is compatible with the cmos process, and could facilitate the fabrication of alpha-si3n4 nanoelectronic or nanophotonic devices on the si platform.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10448]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang XX ,Liu JF ,Cheng BW ,et al. Metal catalysis-free, direction-controlled planar growth of single-crystalline alpha-Si3N4 nanowires on Si(100) substrate[J]. nanotechnology,2006,17(15):3989-3993.
APA	Wang XX ,Liu JF ,Cheng BW ,Yu JZ ,&Wang QM .(2006).Metal catalysis-free, direction-controlled planar growth of single-crystalline alpha-Si3N4 nanowires on Si(100) substrate.nanotechnology,17(15),3989-3993.
MLA	Wang XX ,et al."Metal catalysis-free, direction-controlled planar growth of single-crystalline alpha-Si3N4 nanowires on Si(100) substrate".nanotechnology 17.15(2006):3989-3993.