Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs

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	Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs
	Zhu B (Zhu Bin) ; Han Q (Han Qin) ; Yang XH (Yang Xiao-Hong) ; Ni HQ (Ni Hai-Qiao) ; He JF (He Ji-Fang) ; Niu ZC (Niu Zhi-Chuan) ; Wang X (Wang Xin) ; Wang XP (Wang Xiu-Ping) ; Wang J (Wang Jie)
刊名	chinese physics letters
	2010
卷号	27 期号:3 页码:art. no. 038504
关键词	MOLECULAR-BEAM EPITAXY BUFFER LAYERS DARK CURRENT PHOTODIODES LASERS
通讯作者	zhu, b, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. e-mail address: zhubin@semi.ac.cn
合作状况	其它
英文摘要	top-illuminated metamorphic ingaas p-i-n photodetectors (pds) with 50% cut-off wavelength of 1.75 mu m at room temperature are fabricated on gaas substrates. the pds are grown by a solid-source molecular beam epitaxy system. the large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual inp substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. the dark current densities are typically 5 x 10(-6) a/cm(2) at 0 v bias and 2.24 x 10(-4) a/cm(2) at a reverse bias of 5 v. at a wavelength of 1.55 mu m, the pds have an optical responsivity of 0.48 a/w, a linear photoresponse up to 5 mw optical power at -4 v bias. the measured -3 db bandwidth of a 32 mu m diameter device is 7 ghz. this work proves that ingaas buffer layers grown by solid source mbe are promising candidates for gaas-based long wavelength devices.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-22t13:47:14z no. of bitstreams: 1 metamorphic ingaas p-i-n photodetectors with 1.75 mu m cut-off wavelength grown on gaas .pdf: 473480 bytes, checksum: 584a72e04e7a4f1812d9e23acf8ee9b6 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-22t14:11:54z (gmt) no. of bitstreams: 1 metamorphic ingaas p-i-n photodetectors with 1.75 mu m cut-off wavelength grown on gaas .pdf: 473480 bytes, checksum: 584a72e04e7a4f1812d9e23acf8ee9b6 (md5); made available in dspace on 2010-04-22t14:11:54z (gmt). no. of bitstreams: 1 metamorphic ingaas p-i-n photodetectors with 1.75 mu m cut-off wavelength grown on gaas .pdf: 473480 bytes, checksum: 584a72e04e7a4f1812d9e23acf8ee9b6 (md5) previous issue date: 2010; hi-tech research and development program of china 2007aa032421；national basic research program of china 2006cb302802 ；national natural foundation of china 60876039; 其它
学科主题	光电子学
收录类别	SCI
资助信息	hi-tech research and development program of china 2007aa032421；national basic research program of china 2006cb302802 ；national natural foundation of china 60876039
语种	英语
公开日期	2010-04-22 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11186]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Zhu B ,Han Q ,Yang XH ,et al. Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs[J]. chinese physics letters,2010,27(3):art. no. 038504.
APA	Zhu B .,Han Q .,Yang XH .,Ni HQ .,He JF .,...&Wang J .(2010).Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs.chinese physics letters,27(3),art. no. 038504.
MLA	Zhu B ,et al."Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs".chinese physics letters 27.3(2010):art. no. 038504.