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	Near Full-Composition-Range High-Quality GaAsSb Nanowires Grown by Molecular-Beam Epitaxy
	Li, L.; Pan, D.; Xue, Y.; Wang, X.; Lin, M.; Su, D.; Zhang, Q.; Yu, X.; So, H.; Wei, D.
刊名	Nano Letters
	2017
卷号	Vol.17 No.2页码:622-630
关键词	bandgap tuning GaAs1−xSbx molecular-beam epitaxy nanowires rectifying behavior self-catalyzed
ISSN号	1530-6984
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6042193
专题	湖南大学
作者单位	1.a State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, China 2.Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Microelectronic Science, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, China
推荐引用方式 GB/T 7714	Li, L.,Pan, D.,Xue, Y.,et al. Near Full-Composition-Range High-Quality GaAsSb Nanowires Grown by Molecular-Beam Epitaxy[J]. Nano Letters,2017,Vol.17 No.2:622-630.
APA	Li, L..,Pan, D..,Xue, Y..,Wang, X..,Lin, M..,...&Zhao, J..(2017).Near Full-Composition-Range High-Quality GaAsSb Nanowires Grown by Molecular-Beam Epitaxy.Nano Letters,Vol.17 No.2,622-630.
MLA	Li, L.,et al."Near Full-Composition-Range High-Quality GaAsSb Nanowires Grown by Molecular-Beam Epitaxy".Nano Letters Vol.17 No.2(2017):622-630.

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