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	Semiconductor double heterostructure laser device with InP current blocking layer
	IRIKAWA, MICHINORI; IWASE, MASAYUKI
	1994-06-07
著作权人	THE FURUKAWA ELECTRIC CO., LTD.
专利号	US5319661
国家	美国
文献子类	授权发明
其他题名	Semiconductor double heterostructure laser device with InP current blocking layer
英文摘要	A semiconductor laser device comprising a semiconductor substrate, a multi-layered double heterostructure having active layers, a pair of cladding layers, a ridged waveguide structure and a current confining structure formed between the semiconductor substrate and the active layer. With such an arrangement, injected current is narrowed not only on the side above the ridge of the active layer but also on the substrate side of the active layer to improve the threshold current and its current confinement performance. When the two lateral trenches of the ridge are embedded with resin layers, the ridge stripe width can be made narrow to improve the threshold current of the device. When the active layer is realized in a DCC structure having two active layers and having an intermediary clad layer sandwiched therebetween, the device will show a low threshold current circular beam divergence and stabilized thermal characteristics.
公开日期	1994-06-07
申请日期	1993-06-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38991]
专题	半导体激光器专利数据库
作者单位	THE FURUKAWA ELECTRIC CO., LTD.
推荐引用方式 GB/T 7714	IRIKAWA, MICHINORI,IWASE, MASAYUKI. Semiconductor double heterostructure laser device with InP current blocking layer. US5319661. 1994-06-07.

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