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	Migration enhanced epitaxy fabrication of quantum wells
	JOHNSON, RALPH H.; BLASINGAME, VIRGIL J.
	2008-05-27
著作权人	FINISAR CORPORATION
专利号	US7378680
国家	美国
文献子类	授权发明
其他题名	Migration enhanced epitaxy fabrication of quantum wells
英文摘要	Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using high As fluxes. MEE (Migration Enhanced Epitaxy) is used to flatten layers and enhance smoothness of quantum well interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. MEE is performed by alternately depositing single atomic layers of group III and V before, and/or after, and/or in-between quantum wells. Where GaAs is used, the process can be accomplished by alternately opening and closing Ga and As shutters in an MBE system, while preventing both from being open at the same time. Where nitrogen is used, the system incorporates a mechanical means of preventing nitrogen from entering the MBE processing chamber, such as a gate valve.
公开日期	2008-05-27
申请日期	2004-08-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38224]
专题	半导体激光器专利数据库
作者单位	FINISAR CORPORATION
推荐引用方式 GB/T 7714	JOHNSON, RALPH H.,BLASINGAME, VIRGIL J.. Migration enhanced epitaxy fabrication of quantum wells. US7378680. 2008-05-27.

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