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Transient Characteristics of Interdigitated GaAs Photoconductive Semiconductor Switch at 1-kHz Excitation
Xu, Ming; Liu, Xiaofei; Li, Mengxia; Liu, Kai; Qu, Guanghui; Wang, Vei; Hu, Long; Schneider, Harald
2019
卷号40页码:1136-1138
关键词Gallium arsenide (GaAs) high gain photoconductive semiconductor switch avalanche repetition rate
ISSN号0741-3106
DOI10.1109/LED.2019.2916427
URL标识查看原文
WOS记录号WOS:000473441400027
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/4968590
专题西安理工大学
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GB/T 7714
Xu, Ming,Liu, Xiaofei,Li, Mengxia,et al. Transient Characteristics of Interdigitated GaAs Photoconductive Semiconductor Switch at 1-kHz Excitation[J],2019,40:1136-1138.
APA Xu, Ming.,Liu, Xiaofei.,Li, Mengxia.,Liu, Kai.,Qu, Guanghui.,...&Schneider, Harald.(2019).Transient Characteristics of Interdigitated GaAs Photoconductive Semiconductor Switch at 1-kHz Excitation.,40,1136-1138.
MLA Xu, Ming,et al."Transient Characteristics of Interdigitated GaAs Photoconductive Semiconductor Switch at 1-kHz Excitation".40(2019):1136-1138.
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