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	Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors
	Yao, Rihui[1]; Zheng, Zeke[1]; Xiong, Mei[1,2]; Zhang, Xiaochen[1]; Li, Xiaoqing[1]; Ning, Honglong[1]; Fang, Zhiqiang[1]; Xie, Weiguang[3,4]; Lu, Xubing[5,6]; Peng, Junbiao[1]
	2018
卷号	112期号:10
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4310375
专题	暨南大学
作者单位	1.[1]South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China 2.[2]Shenzhen China Star Optoelect Technol Co Ltd CSOT, Shenzhen 518132, Peoples R China 3.[3]Jinan Univ, Dept Phys, Guangzhou Key Lab Vacuum Coating Technol & New En, Siyuan Lab, Guangzhou 510632, Guangdong, Peoples R China 4.[4]Jinan Univ, Dept Elect Engn, Guangzhou 510632, Guangdong, Peoples R China 5.[5]South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Guangdong, Peoples R China 6.[6]South China Normal Univ, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Guangdong, Peoples R China
推荐引用方式 GB/T 7714	Yao, Rihui[1],Zheng, Zeke[1],Xiong, Mei[1,2],et al. Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors[J],2018,112(10).
APA	Yao, Rihui[1].,Zheng, Zeke[1].,Xiong, Mei[1,2].,Zhang, Xiaochen[1].,Li, Xiaoqing[1].,...&Peng, Junbiao[1].(2018).Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors.,112(10).
MLA	Yao, Rihui[1],et al."Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors".112.10(2018).

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