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	Effect of ITO Serving as a Barrier Layer for Cu Electrodes on Performance of a-IGZO TFT
	Hu, Shiben[1]; Lu, Kuankuan[1]; Ning, Honglong[1]; Fang, Zhiqiang[2]; Liu, Xianzhe[1]; Xie, Weiguang[3,4]; Yao, Rihui[1]; Zou, Jianhua[1]; Xu, Miao[1]; Peng, Junbiao[1]
	2018
卷号	39期号:4页码:504
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4301797
专题	暨南大学
作者单位	1.[1]South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China 2.[2]South China Univ Technol, State Key Lab Pulp & Paper Engn, Guangzhou 510640, Guangdong, Peoples R China 3.[3]Jinan Univ, Dept Phys, Guangzhou Key Lab Vacuum Coating Technol & New En, Siyuan Lab, Guangzhou 510632, Guangdong, Peoples R China 4.[4]Jinan Univ, Dept Elect Engn, Guangzhou 510632, Guangdong, Peoples R China
推荐引用方式 GB/T 7714	Hu, Shiben[1],Lu, Kuankuan[1],Ning, Honglong[1],et al. Effect of ITO Serving as a Barrier Layer for Cu Electrodes on Performance of a-IGZO TFT[J],2018,39(4):504.
APA	Hu, Shiben[1].,Lu, Kuankuan[1].,Ning, Honglong[1].,Fang, Zhiqiang[2].,Liu, Xianzhe[1].,...&Peng, Junbiao[1].(2018).Effect of ITO Serving as a Barrier Layer for Cu Electrodes on Performance of a-IGZO TFT.,39(4),504.
MLA	Hu, Shiben[1],et al."Effect of ITO Serving as a Barrier Layer for Cu Electrodes on Performance of a-IGZO TFT".39.4(2018):504.

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