An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth

	An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth
	Shao YB (Shao Yong-Bo) ; Zhao LJ (Zhao Ling-Juan) ; Yu HY (Yu Hong-Yan) ; Qiu JF (Qiu Ji-Fang) ; Qiu YP (Qiu Ying-Ping) ; Pan JQ (Pan Jiao-Qing) ; Wang BJ (Wang Bao-Jun) ; Zhu HL (Zhu Hong-Liang) ; Wang W (Wang Wei)
刊名	chinese physics letters
	2011
卷号	28 期号:11 页码:114207
学科主题	半导体材料
公开日期	2012-02-21
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22899]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Shao YB ,Zhao LJ ,Yu HY ,et al. An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth[J]. chinese physics letters,2011,28(11):114207.
APA	Shao YB .,Zhao LJ .,Yu HY .,Qiu JF .,Qiu YP .,...&Wang W .(2011).An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth.chinese physics letters,28(11),114207.
MLA	Shao YB ,et al."An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth".chinese physics letters 28.11(2011):114207.