Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures

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	Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures
	Liu GP ; Wu J ; Lu YW ; Li ZW ; Song YF ; Li CM ; Yang SY ; Liu XL ; Zhu QS ; Wang ZG
刊名	journal of applied physics
	2011
卷号	110 期号:2 页码:23705
关键词	FIELD-EFFECT TRANSISTORS INTERFACE ROUGHNESS QUANTUM-WELLS MOBILITY HETEROJUNCTION TRANSPORT MODEL
ISSN号	0021-8979
通讯作者	liu, gp (reprint author), chinese acad sci, key lab semicond mat sci, inst semicond, pob 912, beijing 100083, peoples r china, liugp@semi.ac.cn ; qszhu@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	national science foundation of china[60776015, 61006004, 61076001, 10979507]
语种	英语
公开日期	2012-02-06
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22801]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Liu GP,Wu J,Lu YW,et al. Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures[J]. journal of applied physics,2011,110(2):23705.
APA	Liu GP.,Wu J.,Lu YW.,Li ZW.,Song YF.,...&Wang ZG.(2011).Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures.journal of applied physics,110(2),23705.
MLA	Liu GP,et al."Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures".journal of applied physics 110.2(2011):23705.