Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain
Zhang, J ; Tan, PH ; Zhao, WJ ; Lu, J ; Zhao, JH
刊名journal of raman spectroscopy
2011
卷号42期号:6页码:1388-1391
关键词Raman spectroscopy ultrathin Fe(3)O(4) film crystal orientation strain phonon strain-shift coefficient PULSED-LASER DEPOSITION THIN-FILMS SPIN-TRANSPORT MAGNETITE SEMICONDUCTORS SPINTRONICS SCATTERING CORROSION DEVICES GROWTH
ISSN号0377-0486
通讯作者tan, ph (reprint author), chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china,phtan@semi.ac.cn
学科主题半导体物理
收录类别SCI
资助信息national natural science foundation of china[10874177, 10934007]; special funds for the major state basic research of china[2007cb924903, 2009cb929300]
语种英语
公开日期2012-01-06
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/22705]  
专题半导体研究所_半导体超晶格国家重点实验室
推荐引用方式
GB/T 7714
Zhang, J,Tan, PH,Zhao, WJ,et al. Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain[J]. journal of raman spectroscopy,2011,42(6):1388-1391.
APA Zhang, J,Tan, PH,Zhao, WJ,Lu, J,&Zhao, JH.(2011).Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain.journal of raman spectroscopy,42(6),1388-1391.
MLA Zhang, J,et al."Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain".journal of raman spectroscopy 42.6(2011):1388-1391.
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