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	Sulfur vacancy-rich N-doped MoS2 nanoflowers for highly boosting electrocatalytic N-2 fixation to NH3 under ambient conditions
	Zeng, Libin; Chen, Shuai; van der Zalm, Joshua; Li, Xinyong; Chen, Aicheng
刊名	CHEMICAL COMMUNICATIONS
	2019
卷号	55页码:7386-7389
ISSN号	1359-7345
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3231835
专题	大连理工大学
作者单位	1.Univ Guelph, Dept Chem, Electrochem Technol Ctr, 50 Stone Rd East, Guelph, ON N1G 2W1, Canada. 2.Dalian Univ Technol, Sch Environm Sci & Technol, Key Lab Ind Ecol & Environm Engn MOE, State Key Lab Fine Chem, Dalian 116024, Peoples R China. 3.Univ Guelph, Dept Chem, Electrochem Technol Ctr, 50 Stone Rd East, Guelph, ON N1G 2W1, Canada.
推荐引用方式 GB/T 7714	Zeng, Libin,Chen, Shuai,van der Zalm, Joshua,et al. Sulfur vacancy-rich N-doped MoS2 nanoflowers for highly boosting electrocatalytic N-2 fixation to NH3 under ambient conditions[J]. CHEMICAL COMMUNICATIONS,2019,55:7386-7389.
APA	Zeng, Libin,Chen, Shuai,van der Zalm, Joshua,Li, Xinyong,&Chen, Aicheng.(2019).Sulfur vacancy-rich N-doped MoS2 nanoflowers for highly boosting electrocatalytic N-2 fixation to NH3 under ambient conditions.CHEMICAL COMMUNICATIONS,55,7386-7389.
MLA	Zeng, Libin,et al."Sulfur vacancy-rich N-doped MoS2 nanoflowers for highly boosting electrocatalytic N-2 fixation to NH3 under ambient conditions".CHEMICAL COMMUNICATIONS 55(2019):7386-7389.

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