Influence of energy band of n+ a-Si thin films on performance of IBC-SHJ solar cells | |
Bao, Jianhui; Tao, Ke; Jia, Rui; Liu, Aimin | |
2019 | |
会议名称 | 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 |
会议日期 | 2019-06-12 |
会议地点 | Xi'an, China |
会议录 | 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 |
URL标识 | 查看原文 |
WOS记录号 | [DB:DC_IDENTIFIER_WOSID] |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3230137 |
专题 | 大连理工大学 |
作者单位 | 1.School of Microelectronics, Dalian University of Technology, Dalian, China 2.Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China 3.School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian, China |
推荐引用方式 GB/T 7714 | Bao, Jianhui,Tao, Ke,Jia, Rui,et al. Influence of energy band of n+ a-Si thin films on performance of IBC-SHJ solar cells[C]. 见:2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Xi'an, China. 2019-06-12. |
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