Influence of energy band of n plus a-Si thin films on performance of IBC-SHJ solar cells | |
Bao, Jianhui; Tao, Ke; Jia, Rui; Liu, Aimin | |
2019 | |
会议名称 | 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) |
会议日期 | 2019-01-01 |
关键词 | N plus a-Si thin films Energy band IBC-SHJ Simulation Front surface |
会议录 | 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) |
URL标识 | 查看原文 |
WOS记录号 | [DB:DC_IDENTIFIER_WOSID] |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3228295 |
专题 | 大连理工大学 |
作者单位 | 1.Dalian Univ Technol, Sch Microelect, Dalian, Peoples R China. 2.Chinese Acad Sci, Inst Microelect, Beijing, Peoples R China. 3.Chinese Acad Sci, Inst Microelect, Beijing, Peoples R China. 4.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian, Peoples R China. |
推荐引用方式 GB/T 7714 | Bao, Jianhui,Tao, Ke,Jia, Rui,et al. Influence of energy band of n plus a-Si thin films on performance of IBC-SHJ solar cells[C]. 见:2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC). 2019-01-01. |
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