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Influence of energy band of n plus a-Si thin films on performance of IBC-SHJ solar cells
Bao, Jianhui; Tao, Ke; Jia, Rui; Liu, Aimin
2019
会议名称2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)
会议日期2019-01-01
关键词N plus a-Si thin films Energy band IBC-SHJ Simulation Front surface
会议录2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)
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WOS记录号[DB:DC_IDENTIFIER_WOSID]
内容类型会议论文
URI标识http://www.corc.org.cn/handle/1471x/3228295
专题大连理工大学
作者单位1.Dalian Univ Technol, Sch Microelect, Dalian, Peoples R China.
2.Chinese Acad Sci, Inst Microelect, Beijing, Peoples R China.
3.Chinese Acad Sci, Inst Microelect, Beijing, Peoples R China.
4.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian, Peoples R China.
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GB/T 7714
Bao, Jianhui,Tao, Ke,Jia, Rui,et al. Influence of energy band of n plus a-Si thin films on performance of IBC-SHJ solar cells[C]. 见:2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC). 2019-01-01.
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