| Influence of Selector-introduced Compliance Current on HfOx RRAM Switching Operation | |
| Fang, Yichen ; Cai, Yimao ; Wang, Zongwei ; Yu, Zhizhen ; Yang, Xue ; Huang, Ru | |
| 2015 | |
| 关键词 | compliance current RRAM Current overshooting |
| 英文摘要 | The influences of compliance current (CC) introduced by transistor during the forming, set and reset operations on hafnium oxide based RRAM devices are investigated respectively. Experimental results show that CC during forming operation is more critical to RRAM performances than that in set/reset operations, indicating that the suppression of current overshoot issue is more important during forming process. The impacts of CC on oxygen ions immigration during resistive switching can be responsible for the different influences on devices in set/reset and forming operation.; CPCI-S(ISTP); caiyimao@pku.edu.cn; ruhuang@pku.edu.cn |
| 语种 | 英语 |
| 出处 | 15th Non-Volatile Memory Technology Symposium (NVMTS) |
| 内容类型 | 其他 |
| 源URL | [http://ir.pku.edu.cn/handle/20.500.11897/450172]  |
| 专题 | 信息科学技术学院 |
| 推荐引用方式 GB/T 7714 | Fang, Yichen,Cai, Yimao,Wang, Zongwei,et al. Influence of Selector-introduced Compliance Current on HfOx RRAM Switching Operation. 2015-01-01. |
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